Short period p-type AlN/AlGaN superlattices for deep UV light emitters.

Abstract

The Mg doped AlN/AlxGa1-xN (0.03 ≤ x ≤ 0.05) short period superlattices (SPSLs) were grown by gas source molecular beam epitaxy on (0001) sapphire substrates. The average AlN mole fraction is ∼ 0.7 and the hole concentration is ∼ 7×1017 cm−3. Contacts formed to the SPSLs using Ni/Au bilayer are found to have specific contact resistance ∼ 5×10−5 Ωcm2 near room temperature and to show weak temperature dependence attributed to activation of Mg acceptors in the AlN barriers of SPSLs. These p-SPSLs are attractive for fabrication of transparent low resistive ohmic contacts for deep UV LEDs.

This is a preview of subscription content, access via your institution.

We’re sorry, something doesn't seem to be working properly.

Please try refreshing the page. If that doesn't work, please contact support so we can address the problem.

References

  1. 1

    S. Nikishin, V. Kuryatkov, B. Borisov, G. Kipshidze, A. Chandolu, K. Zhu, M. Holtz, S. N. G. Chu, Yu. Kudryavtsev, R. Asomoza, and H. Temkin, Presentation at International Workshop on Nitride Semiconductors, Aachen, July 22–25, 2002 (unpublished).

    Google Scholar 

  2. 2

    G. Kipshidze, V. Kuryatkov, B. Borisov, S. Nikishin, M. Holtz, S. N. G. Chu and H. Temkin, Phys. Status Solidi A 192 (2002) 286.

    Article  Google Scholar 

  3. 3

    S. A. Nikishin, V. V. Kuryatkov, A. Chandolu, B. A. Borisov, G. D. Kipshidze, I. Ahmad, M. Holtz, and H. Temkin, Jpn. J. Appl. Phys., 42, L1362 (2003).

    CAS  Article  Google Scholar 

  4. 4

    V. Kuryatkov, K. Zhu, B. Borisov, A. Chandolu, I. Gheriasou, G. Kipshidze, S. N. G. Chu, M. Holtz, Yu. Kudryavtsev, R. Asomoza, S. A. Nikishin and H. Temkin, Appl. Phys. Lett., 83, 1319 (2003).

    CAS  Article  Google Scholar 

  5. 5

    S. A. Nikishin, M. Holtz, and H. Temkin, Jpn. J. Appl. Phys., 44, 7221 (2005).

    CAS  Article  Google Scholar 

  6. 6

    T. V. Blank and Yu. A. Gol'dberg, Semiconductors, 41, 1263 (2007) and references therein.

    CAS  Article  Google Scholar 

  7. 7

    S. Nikishin, I. Chary, B. Borisov, V. Kuryatkov, Yu. Kudryavtsev, R. Asomoza, S. Yu. Karpov, and M. Holtz, Appl. Phys. Lett., 95, 163502 (2009).

    Article  Google Scholar 

  8. 8

    A. Chandolu, S. Nikishin, M. Holtz, and H. Temkin, J. Appl. Phys., 102, 114909 (2007).

    Article  Google Scholar 

  9. 9

    M. Pandikunta, M.S. Thesis, Texas Tech University, 2009.

  10. 10

    M. Holtz, G. Kipshidze, A. Chandolu, J. Yun, B. Borisov, V. Kuryatkov, K. Zhu, S. N. G. Chu, S. A. Nikishin, and H. Temkin, Mat. Res. Soc. Symp. Proc., 744, M10.1.1 (2003).

  11. 11

    N. Grandjean, A. Dussaigne, S. Pezzagna, and P. Vennegues, J. Cryst. Growth, 251, 460 (2003), and references therein.

    CAS  Article  Google Scholar 

  12. 12

    I. Chary, B. Borisov, V. Kuryatkov, Yu. Kudryavtsev, R. Asomoza, S. Nikishin, and M. Holtz, Mat. Res. Soc. Symp. Proc., 1108, 1108–A09 (2009).

    Google Scholar 

  13. 13

    http://www.str-soft.com/products/BESST/

  14. 14

    S. L. Chuang and C. S. Chang, Phys. Rev. B 54, 2491 (1996).

    CAS  Article  Google Scholar 

Download references

Acknowledgments

Work at Texas Tech was supported by NSF (ECS-0609416), Army CERDEC contract (W15P7T-07-D-P040), and the J. F Maddox Foundation.

Author information

Affiliations

Authors

Corresponding author

Correspondence to S. Nikishin.

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Nikishin, S., Borisov, B., Mansurov, V. et al. Short period p-type AlN/AlGaN superlattices for deep UV light emitters.. MRS Online Proceedings Library 1202, 103 (2009). https://doi.org/10.1557/PROC-1202-I10-03

Download citation