Electronic Properties of III-Nitride Surfaces and Interfaces Studied by Scanning Photoelectron Microscopy and Spectroscopy

Abstract

We report on a method based on cross-sectional scanning photoelectron microscopy and spectroscopy (XSPEM/S) for studying electronic structure of III-nitride surfaces and interfaces on a submicrometer scale. Cross-sectional III-nitride surfaces prepared by in situ cleavage were investigated to eliminate the polarization effects associated with the interface charges/dipoles normal to the cleaved surface. In contrast to the as-grown polar surfaces which show strong surface band bending, the cleaved nonpolar surfaces have been found to be under the flat-band conditions. Therefore, both doping and compositional junctions can be directly visualized at the cleaved nonpolar surfaces. Additionally, we show that the “intrinsic” valence band offsets at the cleaved III-nitride heterojunctions can be unambiguously determined.

This is a preview of subscription content, access via your institution.

References

  1. 1

    H. W. Jang, K. W. Ihm, T. H. Kang, J. H. Lee, and J. L. Lee, Phys. Status Solidi. B 240, 451 (2003).

    CAS  Article  Google Scholar 

  2. 2

    Y. S. Lu, C. L. Ho, J. A. Yeh, H. W. Lin, and S. Gwo, Appl. Phys. Lett. 92, 212102 (2008).

    Article  Google Scholar 

  3. 3

    Y. S. Lin, S. H. Koa, C. Y. Chan, S. S. H. Hsu, H. M. Lee, and S. Gwo, Appl. Phys. Lett. 90, 142111 (2007).

    Article  Google Scholar 

  4. 4

    G. Martin, S. Strite, A. Botchkarev, A. Agarwal, A. Rockett, H. Morkoç, W. R. L. Lambrecht, and B. Segall, Appl. Phys. Lett. 65, 610 (1994).

    CAS  Article  Google Scholar 

  5. 5

    G. Martin, A. Botchkarev, A. Rockett, and H. Morkoç, Appl. Phys. Lett. 68, 2541 (1996).

    CAS  Article  Google Scholar 

  6. 6

    C. L. Wu, C. H. Shen, and S. Gwo, Appl. Phys. Lett. 88, 032105 (2006).

    Article  Google Scholar 

  7. 7

    P. D. C. King, T. D. Veal, P. H. Jefferson, C. F. McConville, T. Wang, P. J. Parbrook, H. Lu, and W. J. Schaff, Appl. Phys. Lett. 90, 132105 (2007).

    Article  Google Scholar 

  8. 8

    C. L. Wu, J. C. Wang, M. H. Chan, T. T. Chen, and S. Gwo, Appl. Phys. Lett. 83, 4530 (2003).

    CAS  Article  Google Scholar 

  9. 9

    S. Gwo, C. L. Wu, C. H. Shen, W. H. Chang, T. M. Hsu, J. S. Wang, and J. T. Hsu, Appl. Phys. Lett. 84, 3765 (2004).

    CAS  Article  Google Scholar 

  10. 10

    C. L. Wu, C. H. Shen, H. W. Lin, H. M. Lee, and S. Gwo, Appl. Phys. Lett. 87, 241916 (2005).

    Article  Google Scholar 

  11. 11

    C. T. Kuo, H. M. Lee, H. W. Shiu, C. H. Chen, and S. Gwo, Appl. Phys. Lett. 94, 122110 (2009).

    Article  Google Scholar 

  12. 12

    C. L. Wu, H. M. Lee, C. T. Kuo, S. Gwo, and C. H. Hsu, Appl. Phys. Lett. 91, 042112 (2007).

    Article  Google Scholar 

  13. 13

    C. L. Wu, H. M. Lee, C. T. Kuo, C. H. Chen, and S. Gwo, Appl. Phys. Lett. 92, 162106 (2008).

    Article  Google Scholar 

  14. 14

    K. M. Tracy, W. J. Mecouch, R. F. Davis, and R. J. Nemanich, J. Appl. Phys. 94, 3163 (2003).

    CAS  Article  Google Scholar 

  15. 15

    C. L. Wu, H. M. Lee, C. T. Kuo, C. H. Chen, and S. Gwo, Phys. Rev. Lett. 101, 106803 (2008).

    Article  Google Scholar 

Download references

Acknowledgments

This work was supported in part by a research grant (NSC 98-2112-M-007-014-MY3) from the National Science Council (NSC) of Taiwan.

Author information

Affiliations

Authors

Corresponding author

Correspondence to Cheng-Tai Kuo.

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Kuo, CT., Lee, HM., Wu, CL. et al. Electronic Properties of III-Nitride Surfaces and Interfaces Studied by Scanning Photoelectron Microscopy and Spectroscopy. MRS Online Proceedings Library 1202, 43 (2009). https://doi.org/10.1557/PROC-1202-I04-03

Download citation