Structural Study on Crystallization of a-Ge Using Exafs

Abstract

Extended x-ray absorption fine structure (EXAFS) measurements were made on a-Ge and a-Ge:H films which were prepared by sputtering and were annealed at temperatures between 300 and 450° C.The first nearest neighbor distance and the Debye-valler factor were investigated. These values decrease rapidly on the crystallization of the samples. The relationship between them was analyzed in respect of tvo-body potential. The potential of amorphous state is considered to be affected by unharmonic term.

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Correspondence to Masatoshi Wakagi.

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Wakagi, M., Hirano, T., Hanazono, M. et al. Structural Study on Crystallization of a-Ge Using Exafs. MRS Online Proceedings Library 118, 91 (1988). https://doi.org/10.1557/PROC-118-91

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