The Optoelectronic Properties of a-Si, Ge:H(F) Alloys)

Abstract

We survey experimental evidence, obtained by optoelectronic measurements, and theoretical models for the density of gap states in a-Si,Ge:H(F) alloys. This survey shows that increasingly reproducible densities are obtained in the various segments of the energy gap. The results are becoming understood quantitatively. It is not yet clear if the reproducibility signals that the best material has been reached. The electron transport properties of low-gap (1.2 eV < Eopt < 1.4 eV) alloys are adequate for solar cells. Improvement of the hole transport properties, particularly (μr) which is set by the valence band tail width and the density of deep defects, is achieved through a reduction of the Urbach energy.

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Work supported by the Electric Power Research Institute.

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Wagner, S., Chu, V., Shen, D.S. et al. The Optoelectronic Properties of a-Si, Ge:H(F) Alloys). MRS Online Proceedings Library 118, 623 (1988). https://doi.org/10.1557/PROC-118-623

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