An integrated a-Si:H p-i-n thin film diode (TFD) substrate having an ring structure has been developed for driving active matrix liquid crystal display (LCD) panels. The TFD sub-trate developed is for a 5.5″ LCD panel with 115,200 (240×480) pixels. A series of technical data on the fabrication process and the electrical properties of the a-Si TFD are presented. It has been shown that the forward bias characteristics of TFD were mainly dominated by the carrier recombination in the i layer near the p/i interface, and control of the plasma etching condition for the a-Si TFD patterning was very important to reduce the leak current and to improve the production yield.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
W.E. Spear and P.G.LeComber, Phil. Mag., 33, 935 (1976).
P.G.LeComber et al., Electronics Letters, 15, 179 (1979).
S.Togashi et al., Proc. SID., vol.26/1, p.9 (1985).
Z.Yaniv et al., MRS Symp. Proc. vol.70, p.625 (1986).
H.Matsuura et al., J. Appl. Phys., 58, 1578 (1985).
H.Sakai et at., Tech. Digest 1st Int. PVSEC, p.591 (1984).
Y.Uchida et al., Solar Cells, 9, 3 (1983).
I.Sakata et al., Electronics Letters, 18, 1075 (1982).
About this article
Cite this article
Sakai, H., Kamiyama, M. & Tanabe, E. Application of a-Si Diodes to Liquid Crystal Display Panels. MRS Online Proceedings Library 118, 375 (1988). https://doi.org/10.1557/PROC-118-375