Abstract
An integrated a-Si:H p-i-n thin film diode (TFD) substrate having an ring structure has been developed for driving active matrix liquid crystal display (LCD) panels. The TFD sub-trate developed is for a 5.5″ LCD panel with 115,200 (240×480) pixels. A series of technical data on the fabrication process and the electrical properties of the a-Si TFD are presented. It has been shown that the forward bias characteristics of TFD were mainly dominated by the carrier recombination in the i layer near the p/i interface, and control of the plasma etching condition for the a-Si TFD patterning was very important to reduce the leak current and to improve the production yield.
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Sakai, H., Kamiyama, M. & Tanabe, E. Application of a-Si Diodes to Liquid Crystal Display Panels. MRS Online Proceedings Library 118, 375 (1988). https://doi.org/10.1557/PROC-118-375
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DOI: https://doi.org/10.1557/PROC-118-375