a-Si1−xCx:H superlattice structures were fabricated by photo-CVD and glow discharge deposition. The compositional abruptness of the heterojunction has been confirmed by X-ray diffraction and Auger electron spectroscopy. The optical bandgap of amorphous silicon-based superlattices increases as the well layer thickness decreases. The existence of quantized levels in a-Si:H wells is demonstrated by the observation of resonant tunneling current through the three-barrier two-well structure.
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Nebel, C.E., Kessler, F., Bilger, G. et al. Evidence of Quantum Size Effects in a-Si:H/a-Si1−xCx:H Superlattices. MRS Online Proceedings Library 118, 361 (1988). https://doi.org/10.1557/PROC-118-361