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Kinetics of Carrier-Induced Metastable defect Formation in Hydrogenated Amorphous Silicon

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Abstract

This paper investigates the creation rate of carrier-induced defects in hydrogenated amorphous silicon (a-Si:H) metal-insulator-semiconductor (MIS) devices. The results demonstrate that holes increase the rate of defect formation by over 3 orders of magnitude while electrons increase the rate by roughly an order of magnitude. The carrier-induced defect kinetics, light-induced defect annealing, and decay of excess carriers in doped a-Si:H are quantitatively consistent with dispersive diffusion of hydrogen involved in the metastable process. The results provide strong evidence for the involvement of hydrogen in metastable effects in a-Si:H.

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Authors and Affiliations

  1. Xerox Research Center, 3333 Coyote Hill Rd., Palo Alto, 94304, CA, USA

    Warren B. Jackson & M. D. Moyer

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  1. Warren B. Jackson
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  2. M. D. Moyer
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Jackson, W.B., Moyer, M.D. Kinetics of Carrier-Induced Metastable defect Formation in Hydrogenated Amorphous Silicon. MRS Online Proceedings Library 118, 231 (1988). https://doi.org/10.1557/PROC-118-231

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  • DOI: https://doi.org/10.1557/PROC-118-231

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