Preparation of a-Si:H Films by VHF Plasma CVD

MRS Online Proceedings Library volume 118, Article number: 117 (1988) Cite this article

Abstract

A novel method of the preparation of a-Si:H films by employing VHF(144MHz band) plasma is described. Optical emission spectroscopy is employed as a diagnostic tool in the plasma. Due to high generation efficiency of radicals, a-Si:H films are deposited at high deposition rates at low power density without sacrificing electrical properties. Criteria for the deposition of microcrystalline Si films are also discussed.

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Affiliations

  1. Tokyo Institute of Technology, O-okayama, Meguro-ku, 152, Tokyo, Japan

    Shunri Oda, Jun’Ichirou Noda & Masakiyo Matsumura

Authors
  1. Shunri Oda
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  2. Jun’Ichirou Noda
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  3. Masakiyo Matsumura
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Correspondence to Shunri Oda.

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Oda, S., Noda, J. & Matsumura, M. Preparation of a-Si:H Films by VHF Plasma CVD. MRS Online Proceedings Library 118, 117 (1988). https://doi.org/10.1557/PROC-118-117

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