A novel method of the preparation of a-Si:H films by employing VHF(144MHz band) plasma is described. Optical emission spectroscopy is employed as a diagnostic tool in the plasma. Due to high generation efficiency of radicals, a-Si:H films are deposited at high deposition rates at low power density without sacrificing electrical properties. Criteria for the deposition of microcrystalline Si films are also discussed.
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Oda, S., Noda, J. & Matsumura, M. Preparation of a-Si:H Films by VHF Plasma CVD. MRS Online Proceedings Library 118, 117 (1988). https://doi.org/10.1557/PROC-118-117