Preparation of a-Si:H Films by VHF Plasma CVD


A novel method of the preparation of a-Si:H films by employing VHF(144MHz band) plasma is described. Optical emission spectroscopy is employed as a diagnostic tool in the plasma. Due to high generation efficiency of radicals, a-Si:H films are deposited at high deposition rates at low power density without sacrificing electrical properties. Criteria for the deposition of microcrystalline Si films are also discussed.

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  1. 1.

    A. Matsuda, T. Kaga, H. Tanaka and K. Tanaka, Jpn. J. Appl. Phys. 23, L567 (1984).

    Article  Google Scholar 

  2. 2.

    H. Curtins, N. Wyrsch, M. Favre, K. Prasad, M. Brechet and A. V. Shah, Mat. Res. Soc. Proc. 95, 249 (1987).

    CAS  Article  Google Scholar 

  3. 3.

    T. Hamasaki, H. Kurata, M. Hirose and Y. Osaka, Appl. Phys. Lett. 37, 1984 (1980).

    Article  Google Scholar 

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Correspondence to Shunri Oda.

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Oda, S., Noda, J. & Matsumura, M. Preparation of a-Si:H Films by VHF Plasma CVD. MRS Online Proceedings Library 118, 117 (1988).

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