Skip to main content
Log in

1.2 kV AlGaN/GaN Schottky Barrier Diode Employing As+ Ion Implantation on SiO2 Passivation Layer

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

We proposed and fabricated 1.2 kV AlGaN/GaN Schottky barrier Diode (SBD) employing As+ ion implantation on SiO2 passivation layer. As+ ions which had been implanted changed depletion region curvature under negative bias condition, so that the breakdown voltage increased and the leakage current decreased. The breakdown voltage of the proposed device was 1204 V while that of the conventional device was 604 V. The leakage current of the proposed device was 21.2 nA/mm when the cathode bias was −100V while that of the conventional device was 80.3 uA/mm at the same condition. Positive charge of implanted As+ ions induced electrons at the 2 dimensional electron gas (2DEG) region, so that the channel density increased slightly. Thus, forward current increased.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. S. J. Pearton, J. Appl. Phys., Vol. 86, pp1–78, 1999.

    Article  CAS  Google Scholar 

  2. Y. –F. Wu, et. al., Appl. Phys. Lett., Vol. 69, pp1438–1440, 1996.

    Article  CAS  Google Scholar 

  3. S. Arulkumaran, et. al., Appl. Phys. Lett. Vol. 84, pp613–615, 2004

    Article  CAS  Google Scholar 

  4. M.-W. Ha, et. al., Jpn. J. Appl. Phys., Vol. 44, pp6385–6388, 2005

    Article  CAS  Google Scholar 

  5. S-C. Lee et. al., Jpn. J. Appl. Phys., Vol. 45, pp 3398–3400, 2006

    Article  CAS  Google Scholar 

  6. Y. Ohno, et. al., Appl. Phys. Lett., Vol. 84, pp2184–2186, 2004

    Article  CAS  Google Scholar 

  7. R. Vetury, et. al., IEEE Trans. Electron Devices, Vol. 48, pp560–566, 2001

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Lim, J., Choi, YH., Kim, Ys. et al. 1.2 kV AlGaN/GaN Schottky Barrier Diode Employing As+ Ion Implantation on SiO2 Passivation Layer. MRS Online Proceedings Library 1167, 503 (2009). https://doi.org/10.1557/PROC-1167-O05-03

Download citation

  • Received:

  • Accepted:

  • Published:

  • DOI: https://doi.org/10.1557/PROC-1167-O05-03

Navigation