We proposed and fabricated 1.2 kV AlGaN/GaN Schottky barrier Diode (SBD) employing As+ ion implantation on SiO2 passivation layer. As+ ions which had been implanted changed depletion region curvature under negative bias condition, so that the breakdown voltage increased and the leakage current decreased. The breakdown voltage of the proposed device was 1204 V while that of the conventional device was 604 V. The leakage current of the proposed device was 21.2 nA/mm when the cathode bias was −100V while that of the conventional device was 80.3 uA/mm at the same condition. Positive charge of implanted As+ ions induced electrons at the 2 dimensional electron gas (2DEG) region, so that the channel density increased slightly. Thus, forward current increased.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
S. J. Pearton, J. Appl. Phys., Vol. 86, pp1–78, 1999.
Y. –F. Wu, et. al., Appl. Phys. Lett., Vol. 69, pp1438–1440, 1996.
S. Arulkumaran, et. al., Appl. Phys. Lett. Vol. 84, pp613–615, 2004
M.-W. Ha, et. al., Jpn. J. Appl. Phys., Vol. 44, pp6385–6388, 2005
S-C. Lee et. al., Jpn. J. Appl. Phys., Vol. 45, pp 3398–3400, 2006
Y. Ohno, et. al., Appl. Phys. Lett., Vol. 84, pp2184–2186, 2004
R. Vetury, et. al., IEEE Trans. Electron Devices, Vol. 48, pp560–566, 2001
About this article
Cite this article
Lim, J., Choi, YH., Kim, Ys. et al. 1.2 kV AlGaN/GaN Schottky Barrier Diode Employing As+ Ion Implantation on SiO2 Passivation Layer. MRS Online Proceedings Library 1167, 503 (2009). https://doi.org/10.1557/PROC-1167-O05-03