Abstract
We proposed and fabricated 1.2 kV AlGaN/GaN Schottky barrier Diode (SBD) employing As+ ion implantation on SiO2 passivation layer. As+ ions which had been implanted changed depletion region curvature under negative bias condition, so that the breakdown voltage increased and the leakage current decreased. The breakdown voltage of the proposed device was 1204 V while that of the conventional device was 604 V. The leakage current of the proposed device was 21.2 nA/mm when the cathode bias was −100V while that of the conventional device was 80.3 uA/mm at the same condition. Positive charge of implanted As+ ions induced electrons at the 2 dimensional electron gas (2DEG) region, so that the channel density increased slightly. Thus, forward current increased.
Similar content being viewed by others
References
S. J. Pearton, J. Appl. Phys., Vol. 86, pp1–78, 1999.
Y. –F. Wu, et. al., Appl. Phys. Lett., Vol. 69, pp1438–1440, 1996.
S. Arulkumaran, et. al., Appl. Phys. Lett. Vol. 84, pp613–615, 2004
M.-W. Ha, et. al., Jpn. J. Appl. Phys., Vol. 44, pp6385–6388, 2005
S-C. Lee et. al., Jpn. J. Appl. Phys., Vol. 45, pp 3398–3400, 2006
Y. Ohno, et. al., Appl. Phys. Lett., Vol. 84, pp2184–2186, 2004
R. Vetury, et. al., IEEE Trans. Electron Devices, Vol. 48, pp560–566, 2001
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Lim, J., Choi, YH., Kim, Ys. et al. 1.2 kV AlGaN/GaN Schottky Barrier Diode Employing As+ Ion Implantation on SiO2 Passivation Layer. MRS Online Proceedings Library 1167, 503 (2009). https://doi.org/10.1557/PROC-1167-O05-03
Received:
Accepted:
Published:
DOI: https://doi.org/10.1557/PROC-1167-O05-03