1.2 kV AlGaN/GaN Schottky Barrier Diode Employing As+ Ion Implantation on SiO2 Passivation Layer

Abstract

We proposed and fabricated 1.2 kV AlGaN/GaN Schottky barrier Diode (SBD) employing As+ ion implantation on SiO2 passivation layer. As+ ions which had been implanted changed depletion region curvature under negative bias condition, so that the breakdown voltage increased and the leakage current decreased. The breakdown voltage of the proposed device was 1204 V while that of the conventional device was 604 V. The leakage current of the proposed device was 21.2 nA/mm when the cathode bias was −100V while that of the conventional device was 80.3 uA/mm at the same condition. Positive charge of implanted As+ ions induced electrons at the 2 dimensional electron gas (2DEG) region, so that the channel density increased slightly. Thus, forward current increased.

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References

  1. 1

    S. J. Pearton, J. Appl. Phys., Vol. 86, pp1–78, 1999.

    CAS  Article  Google Scholar 

  2. 2

    Y. –F. Wu, et. al., Appl. Phys. Lett., Vol. 69, pp1438–1440, 1996.

    CAS  Article  Google Scholar 

  3. 3

    S. Arulkumaran, et. al., Appl. Phys. Lett. Vol. 84, pp613–615, 2004

    CAS  Article  Google Scholar 

  4. 4

    M.-W. Ha, et. al., Jpn. J. Appl. Phys., Vol. 44, pp6385–6388, 2005

    CAS  Article  Google Scholar 

  5. 5

    S-C. Lee et. al., Jpn. J. Appl. Phys., Vol. 45, pp 3398–3400, 2006

    CAS  Article  Google Scholar 

  6. 6

    Y. Ohno, et. al., Appl. Phys. Lett., Vol. 84, pp2184–2186, 2004

    CAS  Article  Google Scholar 

  7. 7

    R. Vetury, et. al., IEEE Trans. Electron Devices, Vol. 48, pp560–566, 2001

    CAS  Article  Google Scholar 

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Lim, J., Choi, YH., Kim, Ys. et al. 1.2 kV AlGaN/GaN Schottky Barrier Diode Employing As+ Ion Implantation on SiO2 Passivation Layer. MRS Online Proceedings Library 1167, 503 (2009). https://doi.org/10.1557/PROC-1167-O05-03

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