Conformal MOCVD Deposition of GeSbTe in High Aspect Ratio Via Structure for Phase Change Memory Applications


We have demonstrated conformal deposition of amorphous GeSbTe films in high aspect ratio structures by MOCVD. SEM analysis showed the as-deposited GeSbTe films had smooth morphologies and were well controlled for void free amorphous conformal deposition. GeSbTe films adhere well to SiO2, TiN, and TiAlN. The morphology and adhesion are stable in 420°C post process. By annealing at 365°C, amorphous GeSbTe films converted into crystalline GeSbTe with polycrystalline grain sizes of 5nm. Film resistivity in the crystalline phase ranged from 0.001 to 0.1 Ω-cm, suitable for device applications. Phase change devices fabricated with confined via structures filled with MOCVD GeSbTe showed cycle endurances up to 1×1010 with a dynamic set/rest resistance of two orders of magnitude.

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Correspondence to J. F. Zheng.

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Zheng, J.F., Chen, P., Hunks, W. et al. Conformal MOCVD Deposition of GeSbTe in High Aspect Ratio Via Structure for Phase Change Memory Applications. MRS Online Proceedings Library 1160, 1411 (2009).

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