Effect Of Trapping On Dielectric Conduction Mechanisms Of ULK/Cu Interconnects

MRS Online Proceedings Library volume 1156, Article number: 104 (2008) Cite this article

Abstract

Trapping in low-κ dielectric for interconnects was highlighted by voltage shift in IV current-voltage measurements. It is shown that effects of trapping can impact the extraction of conduction mechanisms. Capacitance measurements made on these materials reveal that trapping is at the origin in the increase of capacitance. The creation of dipoles because of this trapping explains this increase in the value of capacitance.

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Affiliations

  1. STMicroelectronics, 850 rue J. Monnet, 38926, Crolles Cedex, France

    V. Verrière, D. Roy & S. Blonkowski

  2. CEA-Leti MINATEC, 17 avenue des Martyrs, 38054, Grenoble Cedex, France

    V. Verrière & C. Guedj

  3. Grenoble Electrical Engineering Lab. (G2ELab) CNRS, 25 avenue des Martyrs, BP166, 38042, Grenoble Cedex 9, France

    A. Sylvestre

Authors
  1. V. Verrière
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  2. C. Guedj
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  3. D. Roy
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  4. S. Blonkowski
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  5. A. Sylvestre
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Correspondence to V. Verrière.

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Verrière, V., Guedj, C., Roy, D. et al. Effect Of Trapping On Dielectric Conduction Mechanisms Of ULK/Cu Interconnects. MRS Online Proceedings Library 1156, 104 (2008). https://doi.org/10.1557/PROC-1156-D01-04

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