Skip to main content
SpringerLink
Log in

Molecular Beam Epitaxy study of a common a-GeO2 interfacial passivation layer for Ge- and GaAs-based MOS heterostructures

  • Articles
  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

Future CMOS technologies will require the use of substrate material with a very high mobility. Therefore, the combination of Ge pMOS with GaAs nMOS devices is investigated for its possible use in advanced CMOS applications. In this work, the physical, chemical and electrical properties of a-GeO2 interfacial passivation layer (IPL) for n-Ge(001) and p-GaAs(001) have been investigated, using Molecular Beam Epitaxy (MBE) technique. The efficient electrical passivation of Ge/GeO2 will be demonstrated, and in the case of GaAs, the use of a thin a-GeO2 interlayer reduces the defects at the interface.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. A. Dimoulas et al., Advanced Gate Stacks for High Mobility Semiconductors, Springer (2007)

  2. J.P. Locquet et al., J. Appl. Phys. 100, 051610 (2006)

    Article  Google Scholar 

  3. C. Merckling et al., Microelec. Eng. 84(9–10), 2243 (2007)

    Article  CAS  Google Scholar 

  4. C. Merckling et al., Appl. Phys. Lett. 89 (23), 232907 (2006)

    Article  Google Scholar 

  5. F. Bellenger et al., ECS Trans. 16(5), 411 (2008)

    Article  CAS  Google Scholar 

  6. C. Merckling et al., Microelec. Eng., doi:10.1016/j.mee.2009.03.048 (2009)

  7. H. Matsubara, T. Sasada, M. Takenaka, and S. Takagi, Appl. Phys. Lett. 93, 032104 (2008)

    Article  Google Scholar 

  8. G. Brammertz et al., Appl. Phys. Lett. 93, 183504 (2008);

    Article  Google Scholar 

  9. J. Massies, F. Delazy, N.T. Linh, J. Vac. Sci. Technol. 17(5) 1134 (1980)

    Article  CAS  Google Scholar 

  10. A. Callegari, P.D. Hoh, D.A. Buchanan, D. Lacey, Appl. Phys. Lett. 54(4), 332 (1989)

    Article  CAS  Google Scholar 

  11. R. Droopad et al., J. Vac. Sci. Technol. B 24, 1479 (2006)

    Article  Google Scholar 

  12. P. de Souza et al., Appl. Phys. Lett. 92, 153508 (2008);

    Article  Google Scholar 

  13. H.-S. Kim et al., Appl. Phys. Lett. 92, 032907 (2008)

    Article  Google Scholar 

  14. J.M. Soler et al., J. Phys. Condens. Matter. 14, 2745 (2002)

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. IMEC, Kapeldreef 75, B-3001, Leuven, Belgium

    C. Merckling, F. Bellenger, D. Kohen, G. Pourtois, G. Brammertz, M. Scarrozza, J. Dekoster, M. Caymax, M. Meuris & M. M. Heyns

  2. Riber, 31 rue Casimir Périer, F-95873, Bezons, France

    J. Penaud

  3. K.U. Leuven, B-3001, Leuven, Belgium

    F. Bellenger, M. Houssa & M. M. Heyns

  4. SUN Synchrotron, L’Orme des Merisiers, F-91196, Gif-sur-Yvette, France

    M. El-Kazzi

Authors
  1. C. Merckling
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. J. Penaud
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. F. Bellenger
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. D. Kohen
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. G. Pourtois
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. G. Brammertz
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. M. Scarrozza
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. M. El-Kazzi
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. M. Houssa
    View author publications

    You can also search for this author in PubMed Google Scholar

  10. J. Dekoster
    View author publications

    You can also search for this author in PubMed Google Scholar

  11. M. Caymax
    View author publications

    You can also search for this author in PubMed Google Scholar

  12. M. Meuris
    View author publications

    You can also search for this author in PubMed Google Scholar

  13. M. M. Heyns
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Merckling, C., Penaud, J., Bellenger, F. et al. Molecular Beam Epitaxy study of a common a-GeO2 interfacial passivation layer for Ge- and GaAs-based MOS heterostructures. MRS Online Proceedings Library 1155, 607 (2008). https://doi.org/10.1557/PROC-1155-C06-07

Download citation

  • Received:

  • Accepted:

  • Published:

  • DOI: https://doi.org/10.1557/PROC-1155-C06-07

Search

Navigation