Abstract
The crystal growth of lanthanum hexaboride (LaB6) thin films was examined by applying the laser molecular beam epitaxy (laser MBE) process. C-axis (100) highly-oriented LaB6 thin films could be fabricated on ultrasmooth sapphire (α-Al2O3 single crystal) (0001) substrates with atomic steps of 0.2 nm in height and atomically flat terraces. The obtained film exhibited a smooth surface with root mean square roughness of 0.15 nm. The lattice parameter of the LaB6 thin film was close to the bulk value reported previously. In the case of deposition on commercial mirror-polished sapphire substrates, the grown film was amorphous. The resistivity of the prepared crystalline LaB6 thin films was as low as 2.2 × 10−4 Ω cm and almost constant in the temperature range of 10–300 K.
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Kato, Y., Ono, Y., Akita, Y. et al. Fabrication and Characterization of Electrically Functional Lanthanum Hexaboride Thin Films on Ultrasmooth Sapphire Substrates. MRS Online Proceedings Library 1148, 1202 (2008). https://doi.org/10.1557/PROC-1148-PP12-02
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DOI: https://doi.org/10.1557/PROC-1148-PP12-02