Measurement and Analysis of Structural Damping in Silicon Carbide Microresonators


The design of microresonators with high natural frequencies (1 MHz to 1 GHz) and low structural damping is essential for devices used for applications in communications. Here, we report experimental measurements of damping at low pressure and ambient temperature in electrostatically-actuated, metallized silicon carbide microresonators. Comparison of the measured values with the predictions of a model for thermoelastic damping indicates that the contribution of this mechanism to the measured damping ranges from 10% to 50% over a broad frequency range (3 MHz to 30 MHz).

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Correspondence to Sairam Prabhakar.

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Prabhakar, S., Nabki, F., El-Gamal, M. et al. Measurement and Analysis of Structural Damping in Silicon Carbide Microresonators. MRS Online Proceedings Library 1139, 304 (2008).

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