Abstract
Phosphorus ions were implanted into silicon layers deposited by low pressure chemical vapor deposition onto thermally oxidized silicon substrates. Thermal anneals diffused the phosphorus and the resulting depth profiles were determined by secondary-ion mass spectrometry (SIMS). Transmission electron microscopy shows that the polysilicon layers have a multi-layer pattern of grains. The phosphorus profiles are fit by a Monte Carlo simulation technique that includes both grain and grain-boundary diffusion. The grain-boundary diffusion coefficient is found to be thermally activated with an activation energy of 3.3 eV.
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Lavine, J.P., Lee, S.T., Black, D.L. et al. Phosphorus Diffusion in Polycrystalline Silicon: Monte Carlo Simulation of Experimental Diffusion Profiles. MRS Online Proceedings Library 106, 39 (1987). https://doi.org/10.1557/PROC-106-39
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DOI: https://doi.org/10.1557/PROC-106-39