Abstract
Poly-Si films were e-gun evaporated onto glass substrates. The Hall-mobility for holes was found to be about 2 cm2 /Vs in undoped poly-Si films deposited at 400°C and 9 cm2 /Vs at 500°C. TFTs were fabricated on the base of poly-Si evaporation technique on borosilicate glass at a highest process temperature of 550°C without ion implantation. The electrical TFT characteristics yield electron field-effect mobilities higher than 10 cm2/Vs as, well as threshold voltages less than IV and an on/off current ratio in excess of 104.
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Schmolla, W., Diefenbach, J., Blang, G. et al. Poly-Silicon Deposition by Evaporation for TFTs. MRS Online Proceedings Library 106, 329 (1987). https://doi.org/10.1557/PROC-106-329
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DOI: https://doi.org/10.1557/PROC-106-329