Poly-Silicon Deposition by Evaporation for TFTs

Abstract

Poly-Si films were e-gun evaporated onto glass substrates. The Hall-mobility for holes was found to be about 2 cm2 /Vs in undoped poly-Si films deposited at 400°C and 9 cm2 /Vs at 500°C. TFTs were fabricated on the base of poly-Si evaporation technique on borosilicate glass at a highest process temperature of 550°C without ion implantation. The electrical TFT characteristics yield electron field-effect mobilities higher than 10 cm2/Vs as, well as threshold voltages less than IV and an on/off current ratio in excess of 104.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    Migliorato, progress in active matrix addressing of LCDs, proceedings of eurodisplay ’87, Institute of Physics, London, U.K.

  2. 2.

    Morozumi, Oguchi, Misawa, Araki, Ahshima, SID ’84, Digest

  3. 3.

    Oana, Kotake, Mokai, Ide, I.I. Appl. Phys. vol. 22, Supplement 22-1, 1983

  4. 4.

    Matsui, Shiraki, Maruyama, J. Appl. Phys. 55(6), 1984

  5. 5.

    Fossum, Ortiz-Conde, Shichijo, Banerjee, IEEE Transactions on electron devices, vol. ed-32, No. 9, Sept., 1985

  6. 6.

    Brotherton, Young, Gill, ESSDERC ’87, 17th European SSDR Conference, Bologna, Italy, Sept. 14–17, 1987

Download references

Author information

Affiliations

Authors

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Schmolla, W., Diefenbach, J., Blang, G. et al. Poly-Silicon Deposition by Evaporation for TFTs. MRS Online Proceedings Library 106, 329 (1987). https://doi.org/10.1557/PROC-106-329

Download citation