Characterization of Arsenic Implanted Epitaxially Aligned Polysilicon-on-Silicon Films

Abstract

Nonuniformities in the polysilicon-to-silicon interface and in the polysilicon structure are expected to produce a nonuniform diffusion front when arsenic is diffused from polysilicon during epitaxial alignment. Using transmission electron microscopy, we find surprisingly uniform arsenic diffusion fronts in the underlying silicon substrate following high temperature annealing. Several explanations of this result are proposed. We also report new evidence of a strong reduction in the time to achieve complete epitaxial transformation of the polysilicon when the polysilicon thickness is reduced. A corresponding reduction in the associated arsenic penetration depth is demonstrated.

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References

  1. 1.

    C.Y. Wong, A.E. Michel, R.D. Isaac, R.H. Kastl, and S.R. Mader, J. Appl. Phys., 55 (4),1131 (1984).

    CAS  Article  Google Scholar 

  2. 2.

    J.C. Bravman, G.L. Patton, and J.D. Plummer, J. Appl. Phys., 57 (8), 2779 (1985).

  3. 3.

    G.L. Patton, J.C. Bravman, and J.D. Plummer, IEEE Trans. Electron Devices, ED-33, 1754 (1986).

  4. 4.

    E. Crabbé, et al., 1986 Intl. Elect. Dev. Meeting Tech. Dig. (IEEE, New York, 1986), p. 28.

  5. 5.

    N. Natsuaki, M. Tamura, T. Miyazki, and Y. Yanagi, Intl. Elect. Dev. Meeting Tech. Dig. (IEEE, New York, 1983), p. 662.

  6. 6.

    E. Crabbé, et al., in Tech. Dig.: 1987 Intl. Symp. on VLSI Technology, Systems and Applications, Taipei, Taiwan, May 13–15, 1987.

  7. 7.

    H. Takemura, et al., 1986 IEDM Tech. Dig. (IEEE,New York, 1986), p. 424.

  8. 8.

    B.Y. Tsaur and L.S. Hung, Appl. Phys. Lett., 37, 648 (1980).

    CAS  Article  Google Scholar 

  9. 9.

    M. Tamura, N. Natsuaki, S. Aoki, Jap. Journal Appl. Phys., 24 (2),L151 (1985).

  10. 10.

    J.L. Hoyt, et al., Appl. Phys. Lett, 50, 751 (1987).

    CAS  Article  Google Scholar 

  11. 11.

    J.L. Hoyt, E. Crabbé, J.F. Gibbons, and R.F.W. Pease, in MRS Symp. Proc. 92, edt. S.R. Wilson (Materials Research Soc., Pittsburgh, PA), p. 47.

  12. 12.

    V. Probst, et al. in Semiconductor Silicon: 1986, edt. by H.R. Huff, et al. (Electrochem. Soc. Press, Princeton, NJ, 1986), p. 594.

  13. 13.

    H. Oppolzer, W. Eckers and H. Schaber, J. de Phys. 46, C4–523 (1985)

  14. 14.

    T.T. Sheng and R.B. Marcus, J. Electrochem. Soc. 128, 881 (1981).

    CAS  Article  Google Scholar 

  15. 15.

    M.C. Roberts, K.J. Yallup and G.R. Booker, in Microscopy of Semi. Mat. 1985, edt, by A.G. Cullis and D.B. Holt (Inst. of Phys. Conf. Ser. No. 76, Adam Hilger Ltd., Bristol, Gr. Br. 1985), p. 483.

  16. 16.

    N. Jorgensen, et al., ibid, p. 471.

  17. 17.

    Y. Komem, C.Y. Wong, and H.B. Harrison, J. Appl. Phys. 62, 131 (1987).

    CAS  Article  Google Scholar 

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Hoyt, J.L., Crabbé, E.F., Pease, R.F.W. et al. Characterization of Arsenic Implanted Epitaxially Aligned Polysilicon-on-Silicon Films. MRS Online Proceedings Library 106, 279 (1987). https://doi.org/10.1557/PROC-106-279

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