Rapid Thermal Annealed Undoped LPCVD Si/Single Crystal Si Substrate Structures with an Implant of Si Near Interfaces

Abstract

The breaking up of a native oxide layer of a LPCVD amorphous Si/single crystal n+Si substrate interface by a rapid-thermal annealing was studied from the point of view of oxygen movement and morphological change. Oxygen atoms began to move at 1025°C. After annealing at 1115°C for 30sec, the quantity of oxygen atoms near the interface decreased dramatically and a silicon implant near the interface could enhance the decrease. More detailed observation was carried out by cross-section high-resolution transmission electron microscopy. After annealing at 940°C for 30sec, the native oxide layer was continuous. On the qther hand, with a silicon implant near the interface, it changed into small oxide balls and an epitaxial growth occurred in the LPCVD layer with twins caused by these oxide balls. After annealing at 1115°C for 30sec, even without the silicon implant, a complete epitaxial growth occurred but it seemed that some SiOx particles dissolved into a single crystal Si layer near the interface.

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Ogawa, S., Okuda, S., Kouzaki, T. et al. Rapid Thermal Annealed Undoped LPCVD Si/Single Crystal Si Substrate Structures with an Implant of Si Near Interfaces. MRS Online Proceedings Library 106, 273 (1987). https://doi.org/10.1557/PROC-106-273

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