Resistivity and Carrier Mobilities in Heavily Doped Polycrystalline Silicon Thin Films

MRS Online Proceedings Library volume 106, Article number: 261 (1987) Cite this article

Abstract

Electrical conduction data from heavily n and p-doped polysilicon thin films are presented. The sheet resistance in the range from 1 kΩ/☐ to 100 Ω/☐ is characterized over temperatures from 20°K to 450°K. It is shown that the polysilicon resistivity, larger than the corresponding crystalline value by a factor ~ 10 in the same doping range, is temperature insensitive. This larger resistivity is correlated to the degree of dopant activation and the mobility. The measured mobility varying from 8 to 20 cm2/V•s is smaller than the corresponding crystalline value by a factor 10 ~ 3.

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Affiliations

  1. Department of Applied Physics and Electrical Engineering, Oregon Graduate Center, 19600 N.W. Von Neumann Drive, Beaverton, OR, 97006, USA

    Dae M. Kim & Feng Qian

  2. Tektronix Laboratories, Tektronix Inc, P.O. Box 500, Beaverton, OR, 97077, United States

    Charles U. Bickford & Simon Yu

Authors
  1. Dae M. Kim
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  2. Feng Qian
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  3. Charles U. Bickford
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  4. Simon Yu
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Kim, D.M., Qian, F., Bickford, C.U. et al. Resistivity and Carrier Mobilities in Heavily Doped Polycrystalline Silicon Thin Films. MRS Online Proceedings Library 106, 261 (1987). https://doi.org/10.1557/PROC-106-261

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