Modelling of the Dislocation Influence on Electrical Properties of Polycrystalline Silicon Cells

MRS Online Proceedings Library volume 106, Article number: 225 (1987) Cite this article

Abstract

The influence of the density Ndis and recombination activity Sd of dislocations on the photocurrent JSC the spectral variation of JSC and electron diffusion length Ln are computed by means of the Green’s function. Sd is the surface recombination velocity of the space charge cylinder surrounding a dislocation line, assumed to be perpendicular to the illuminated surface of the cells.

It is found that the value and the spectral variation in the near infrared of J , and that of L, are dependent on N and Sd, specially when Ndis and Sd are higher than 104 cm−2 and 104 cm s−1 respectively. A reasonnable agreement is obtained with experimental results.

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Affiliations

  1. Laboratoire de Photoélectricité des Semi-conducteurs, Faculté des Sciences et Techniques de Saint-Jérôme, Université d’Aix-Marseille III, Marseille Cedex 13, F-13397, United States

    H. El Ghitani & S. Martinuzzi

Authors
  1. H. El Ghitani
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  2. S. Martinuzzi
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Ghitani, H.E., Martinuzzi, S. Modelling of the Dislocation Influence on Electrical Properties of Polycrystalline Silicon Cells. MRS Online Proceedings Library 106, 225 (1987). https://doi.org/10.1557/PROC-106-225

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