Improvement of Turn-Off Characteristics in ZnOTFT’s by Introducing Hydrogen During MOCVD Growth

MRS Online Proceedings Library volume 1000, Article number: 602 (2007) Cite this article

Abstract

High Mobility < 10 cm2Vsec, enables larger pixel opening, safer operation compared to TFT-LCD based on amorphous Si.High current driving TFT, high speed data transfer.High optical transparency, direct, wide bandgap.Stable against water and oxygen, because already oxidized.

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Affiliations

  1. Department of Electrical and Computer Engineering, Ajou University, Suwon, Korea

    Jungyol Jo & Hyoshik Choi

  2. NFC, Samsung Advanced Institute of Technology, Suwon, Korea

    Ogweon Seo & Chan Bong Jun

Authors
  1. Jungyol Jo
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  2. Ogweon Seo
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  3. Hyoshik Choi
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  4. Chan Bong Jun
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Correspondence to Jungyol Jo.

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Jo, J., Seo, O., Choi, H. et al. Improvement of Turn-Off Characteristics in ZnOTFT’s by Introducing Hydrogen During MOCVD Growth. MRS Online Proceedings Library 1000, 602 (2007). https://doi.org/10.1557/PROC-1000-L06-02

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