Abstract
A dual electron beam machine has been used to anneal boron implanted layers in order to study the diffusion and activation behaviour over a wide range of doses. The annealed implants have been characterized by spreading resistance profiling and secondary ion mass spectroscopy (SIMS). Carrier concentration profiles show that millisecond duration anneals can activate boron implants. A boron dose of 1E16 ions/cm2 was annealed to give a sheet resistance of 30 Ωsq with 40% of the implant activated. The SIMS technique showed there were no significant differences between the atomic profiles of the as-implanted samples and specimens subjected to a millisecond anneal or to a low temperature 850°C rapid isothermal anneal for 10s.
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Smith, D.A., McMahon, R.A., Ahmed, H. et al. Millisecond Duration Annealing of Boron Implants in Silicon. MRS Online Proceedings Library 100, 725 (1987). https://doi.org/10.1557/PROC-100-725
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DOI: https://doi.org/10.1557/PROC-100-725