Ion-Beam Mixing and Amorphization in Au/Zr Bilayers


Au/Zr bilayer films with inert-gas markers were produced by low energy (< 4 keV) implantation. Mass transport was measured during ion-beam mixing with 1 MeV Kr at several temperatures between 330 and 540K. Two distinct regimes of apparent Arrhenius behavior were found with activation enthalpies of 0.06 and 0.9 eV in the temperature range 330–440K and 460–540K, respectively. Microstructural changes during ion-beam mixing were studied in situ, in a high voltage electron microscope. Heterogeneous nucleation of an amorphous phase was observed during mixing. The results are compared with similar studies reported previously in Ni/Zr bilayer specimens.

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Ding, FR., Okamoto, P.R. & Rehn, L.E. Ion-Beam Mixing and Amorphization in Au/Zr Bilayers. MRS Online Proceedings Library 100, 69 (1987).

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