Transient Structural Relaxation and Melting Temperature of Amorphous Silicon

Abstract

The structure of ion-implanted a-Si has been studied using Raman spectroscopy. It is shown that the average bond-angle distortion and the strain energy stored in the random network vary drastically upon annealing. Relaxation is enhanced in the case of heating by laser irradiation. The results imply that the apparent melting temperature of a-Si may vary from one experiment to another, depending on the heating rate and -method.

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Correspondence to W. C. Sinke.

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Sinke, W.C., Warabisako, T., Miyao, M. et al. Transient Structural Relaxation and Melting Temperature of Amorphous Silicon. MRS Online Proceedings Library 100, 549 (1987). https://doi.org/10.1557/PROC-100-549

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