Nanosecond Resolved Temperature Measurements Following Pulsed Laser Irradiation

MRS Online Proceedings Library volume 100, Article number: 525 (1987) Cite this article

Abstract

A transient resistance technique has been developed which allows monitoring the temperature of a thin film sample at a fixed depth from the surface following pulsed laser irradiation. The technique utilizes the temperature dependence of a thin, electrically insulated, semiconducting or metallic layer. Temperature determinations with nanosecond resolution, an absolute accuracy of ±50 K, and a relative accuracy of ±5 K are demonstrated. Combined with simultaneous interface position and velocity measurements, the undercooling at the interface during rapid solidification may be obtained. Preliminary results using this technique during the solidification of thin Ge films are presented.

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  1. Department of Materials Science, Cornell University, Ithaca, NY, 14853, USA

    Michael O. Thompson

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  1. Michael O. Thompson
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Correspondence to Michael O. Thompson.

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Thompson, M.O. Nanosecond Resolved Temperature Measurements Following Pulsed Laser Irradiation. MRS Online Proceedings Library 100, 525 (1987). https://doi.org/10.1557/PROC-100-525

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