Picosecond Laser Induced Melting: The Dielectric Function of Molten Silicon and Superheating in the Liquid Phase

MRS Online Proceedings Library volume 100, Article number: 477 (1987) Cite this article

Abstract

The complex dielectric function of molten silicon produced after picosecond illumination is found to be well described by a Drude model from 1.1 eV to 3.5 eV. Close to the melting temperature, we obtain ωp = 2.50 1016rad/s and τ = 212 10−18s. Transiently, the liquid temperature can exceed the melting temperature or even the boiling temperature Tb. We observe this transient heating and model it with a relatively simple computer code which includes superheating of the liquid above Tb. These measurements are possible thanks to a novel pump and probe technique.

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Author notes

  1. K. D. Li

    Present address: Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA

Affiliations

  1. Princeton Laboratory for Ultrafast Spectroscopy (PLUS), Department of Electrical Engineering, Princeton University, Princeton, NJ, 08544, USA

    P. M. Fauchet & K. D. Li

Authors
  1. P. M. Fauchet
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  2. K. D. Li
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Correspondence to P. M. Fauchet.

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Fauchet, P.M., Li, K.D. Picosecond Laser Induced Melting: The Dielectric Function of Molten Silicon and Superheating in the Liquid Phase. MRS Online Proceedings Library 100, 477 (1987). https://doi.org/10.1557/PROC-100-477

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