Nucleation in Amorphous Si:H Alloy

Abstract

A method of producing microcrystalline material from thin films of hydrogenated amorphous silicon was investigated. Exposure to gamma and neutron radiation, and silicon self ion implantation were used to induce nucleation in the amorphous material. According to the preliminary results, neutron irradiation represents a most promising method for promoting crystallization.

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Correspondence to Y. C. Koo.

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Koo, Y.C., Perrin, A.R., Aust, K.T. et al. Nucleation in Amorphous Si:H Alloy. MRS Online Proceedings Library 100, 429 (1987). https://doi.org/10.1557/PROC-100-429

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