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The Promotion of Silicide Formation using a Scanned Silicon Ion Beam

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Abstract

The promotion of silicide reactions at the interface between silicon and a metal overlayer is described, the reactions being initiated by scanned ion beams. The relative effects of low and high energy Si+ and Si2+ beams are discussed and the results of subsequent annealing are compared with those seen when using low energy (5keV) argon ion beams. The implications for the writing of metallisation lines are also noted.

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Authors and Affiliations

  1. Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, U.K.

    E. J. Williams, E. G. Bithell, C. B. Boothroyd & W. M. Stobbs

  2. Department of Physics, University of Cambridge, Microelectronics Research Laboratory, Milton Road, Cambridge, CB4 4FW, U.K.

    R. J. Young & J. R. A. Cleaver

Authors
  1. E. J. Williams
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  2. E. G. Bithell
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  3. C. B. Boothroyd
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  4. W. M. Stobbs
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  5. R. J. Young
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  6. J. R. A. Cleaver
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Williams, E.J., Bithell, E.G., Boothroyd, C.B. et al. The Promotion of Silicide Formation using a Scanned Silicon Ion Beam. MRS Online Proceedings Library 100, 287 (1987). https://doi.org/10.1557/PROC-100-287

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  • DOI: https://doi.org/10.1557/PROC-100-287

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