The Promotion of Silicide Formation using a Scanned Silicon Ion Beam

Abstract

The promotion of silicide reactions at the interface between silicon and a metal overlayer is described, the reactions being initiated by scanned ion beams. The relative effects of low and high energy Si+ and Si2+ beams are discussed and the results of subsequent annealing are compared with those seen when using low energy (5keV) argon ion beams. The implications for the writing of metallisation lines are also noted.

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Correspondence to E. J. Williams.

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Williams, E.J., Bithell, E.G., Boothroyd, C.B. et al. The Promotion of Silicide Formation using a Scanned Silicon Ion Beam. MRS Online Proceedings Library 100, 287 (1987). https://doi.org/10.1557/PROC-100-287

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