The promotion of silicide reactions at the interface between silicon and a metal overlayer is described, the reactions being initiated by scanned ion beams. The relative effects of low and high energy Si+ and Si2+ beams are discussed and the results of subsequent annealing are compared with those seen when using low energy (5keV) argon ion beams. The implications for the writing of metallisation lines are also noted.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
D.F. Reich, D.J. Fray, A.F. Evason, J.R.A. Cleaver and H. Ahmed, Microelectronic Engineering 5, 171 (1986).
H. Ahmed, J. Microsc. 139, 167 (1985).
C.B. Boothroyd, W.M. Stobbs and K.N. Tu, Appl. Phys. Lett. 50, 577 (1987).
C.B. Boothroyd, Ph.D. thesis, University of Cambridge, 1986.
G. Ottaviani, K.N. Tu, R.D. Thompson, J.W. Mayer and S.S. Lau, J. Appl. Phys. 54, 4614 (1983).
S.B. Newcomb, C.B. Boothroyd and W.M. Stobbs, J. Microsc. 140, 195 (1985).
E.J. Williams and W.M. Stobbs, in Electron Microscopy and Analysis 1987, edited by L.M. Brown (Inst. Phys. Conf. Ser. 90, Adam Hilger, Bristol, 1986).
About this article
Cite this article
Williams, E.J., Bithell, E.G., Boothroyd, C.B. et al. The Promotion of Silicide Formation using a Scanned Silicon Ion Beam. MRS Online Proceedings Library 100, 287 (1987). https://doi.org/10.1557/PROC-100-287