The Promotion of Silicide Formation using a Scanned Silicon Ion Beam


The promotion of silicide reactions at the interface between silicon and a metal overlayer is described, the reactions being initiated by scanned ion beams. The relative effects of low and high energy Si+ and Si2+ beams are discussed and the results of subsequent annealing are compared with those seen when using low energy (5keV) argon ion beams. The implications for the writing of metallisation lines are also noted.

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  1. 1.

    D.F. Reich, D.J. Fray, A.F. Evason, J.R.A. Cleaver and H. Ahmed, Microelectronic Engineering 5, 171 (1986).

    CAS  Article  Google Scholar 

  2. 2.

    H. Ahmed, J. Microsc. 139, 167 (1985).

    Article  Google Scholar 

  3. 3.

    C.B. Boothroyd, W.M. Stobbs and K.N. Tu, Appl. Phys. Lett. 50, 577 (1987).

    CAS  Article  Google Scholar 

  4. 4.

    C.B. Boothroyd, Ph.D. thesis, University of Cambridge, 1986.

  5. 5.

    G. Ottaviani, K.N. Tu, R.D. Thompson, J.W. Mayer and S.S. Lau, J. Appl. Phys. 54, 4614 (1983).

    CAS  Article  Google Scholar 

  6. 6.

    S.B. Newcomb, C.B. Boothroyd and W.M. Stobbs, J. Microsc. 140, 195 (1985).

    CAS  Article  Google Scholar 

  7. 7.

    E.J. Williams and W.M. Stobbs, in Electron Microscopy and Analysis 1987, edited by L.M. Brown (Inst. Phys. Conf. Ser. 90, Adam Hilger, Bristol, 1986).

    Google Scholar 

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Correspondence to E. J. Williams.

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Williams, E.J., Bithell, E.G., Boothroyd, C.B. et al. The Promotion of Silicide Formation using a Scanned Silicon Ion Beam. MRS Online Proceedings Library 100, 287 (1987).

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