Enhanced Oxidation of TiSi2 Films by As+ Implantation

MRS Online Proceedings Library volume 100, Article number: 267 (1987) Cite this article

Abstract

The influence of As+-ion implantation on the oxidation of TiSi2 films is investigated. It will be shown that implantation leads to a greatly increased rate of oxidation in a dry O2 ambient. Low-temperature oxidation of the implanted films not only results in substantial oxidation of the films, but completely alters the films’ morphology. Different implantation techniques were used to isolate the effects of ion-induced damage from chemical effects, so that each could be separately studied. It will be shown that neither chemical nor damage effects are able, by themselves, to account for the enhanced oxidation. Rather, a model is proposed to explain the role of implantation in the oxidation process which depends on a synergistic relation between these two effects.

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Affiliations

  1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA

    O. W. Holland & D. Fathy

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  1. O. W. Holland
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  2. D. Fathy
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Correspondence to O. W. Holland.

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Holland, O.W., Fathy, D. Enhanced Oxidation of TiSi2 Films by As+ Implantation. MRS Online Proceedings Library 100, 267 (1987). https://doi.org/10.1557/PROC-100-267

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