A Study of Damage in Silicon Created By and P+ Implantation

Abstract

The damage and annealing behavior of <100> Si implanted at room temperature by and P+ at different energies (5-600KeV) and intermediate dose (∼1014/cm2) has been investigated. Experimental results show that the damage created by implantation is always greater than that of P+ implantation. The ratio of total displaced atoms of the target cuased by molecular and atomic implantation, ND(mol)d/ND(atom) reached a maximal value at 100KeV and 50KeV (P+) after rapid thermal annealing, the carrier concentration profiles measured by spreading resistance measurements are also different for the and P+ implanted samples. We attribute essentially this phenomenon to the displacement spike, but the multiple collision effect and the interaction between two molecular fragments should be considered while the incident energy is high.

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References

  1. 1.

    D.A.Thompson, S.S.Johar, Nucl.Instr. and Meth.170 (1980) 281.

    CAS  Article  Google Scholar 

  2. 2.

    D.A.Thompson, Radiation Effects, 1981, Vol.56, p105.

  3. 3.

    A.Grob, J.J.Brob and A.Golanski, Nucl.Instr. and Meth. B19/20 (1987) p55.

  4. 4.

    D.S.Gemmell, Nucl.Instr. and Meth. 194 (1982) p255.

  5. 5.

    D.A.Thompson and R.S.Walker, Radiation Effects, 36 (1978) 91.

    CAS  Article  Google Scholar 

  6. 6.

    G.S.Qehrlein et al., Appl. Phys. Lett. 45 (1984) 417.

    Article  Google Scholar 

  7. 7.

    P.Sigmund, Appl. Phys. Lett. 25, No.3, 169 (1974).

    Article  Google Scholar 

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Correspondence to Fang Ziwei.

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Ziwei, F., Chenglu, L. & Shihchang, T. A Study of Damage in Silicon Created By and P+ Implantation. MRS Online Proceedings Library 100, 255 (1987). https://doi.org/10.1557/PROC-100-255

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