Pulsed laser annealing of silicon implanted by Group (III, V) dopants leads to the formation of supersaturated alloys by nonequilibrium processes occurring in the interfacial region during liquid phase epitaxial regrowth. The distribution coefficient from the melt (k′) and the maximum dopant substitutional solubility (C maxS ) are far greater than equilibrium values and both are functions of growth velocity. Substitutional solubility is limited by lattice strain and by constitutional supercooling at the interface during regrowth. Values for C maxS obtained at different growth velocities are compared with predictions of thermodynamic limits for solute trapping.
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Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation.
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White, C.W., Appleton, B.R., Stritzker, B. et al. Kinetic Effects and Mechanisms Limiting Substitutional Solubility in the Formation of Supersaturated Alloys by Pulsed Laser Annealing. MRS Online Proceedings Library 1, 59 (1980). https://doi.org/10.1557/PROC-1-59