Pulse Diffused N+ Layers in GaAs

MRS Online Proceedings Library volume 1, Article number: 247 (1980) Cite this article

Abstract

Pulse diffusion has been used for doping GaAs n-type to over 1019 cm−3. Surface arsenic loss is avoided through using As2Se3 as the diffusion source. A reduction in electrical activity similar to that reported for pulse annealed implanted layers occurs with any subsequent heat treatment. A resistive region, found at the surface of the profile, can be circumvented through additionally heating the GaAs thermally during the pulse diffusion and reducing the rapidity of the quench.

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Affiliations

  1. Rome Air Development Center, Hanscom AFB, Bedford, MA, 1731, USA

    D. Eirug Davies, T. G. Ryan & J. P. Lorenzo

  2. College of the Holy Cross, Worcester, MA, 1610, USA

    E. F. Kennedy

Authors
  1. D. Eirug Davies
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  2. T. G. Ryan
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  3. J. P. Lorenzo
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  4. E. F. Kennedy
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Correspondence to D. Eirug Davies.

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Davies, D.E., Ryan, T.G., Lorenzo, J.P. et al. Pulse Diffused N+ Layers in GaAs. MRS Online Proceedings Library 1, 247 (1980). https://doi.org/10.1557/PROC-1-247

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