Optical, X-ray and transmission electron microscopy plus preferential chemical etching have been used to examine the dislocations and lattice strain introduced during cw laser annealing of silicon. In addition to a substrate scanning mode we operate our cw Ar-ion laser in a “pulse” mode by using an electronically activated shutter located within the laser cavity. This permits accurate measurements to be made on isolated spots or large area scans with a dislocation density that can be deliberately varied. In particular we discuss surface slip traces, their component dislocations and resulting lattice strains, as well as submicron extrinsic dislocation loops which result from the condensation of ion-implantation produced interstitial silicon. Recommendations are presented for producing defect and strain-free material, as well as samples with specific densities of dislocations.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
G.A. Rozgonyi, in Festkörperprobleme (Advances in Solid State Physics), Vol. XX, pg. 229, J. Treusch (Ed.), Vieweg, Braunschweig 1980.
G.A. Rozgonyi and H. Baumgart, J. de Physique, 41, Suppl. 5, pg. C4–85 (1980).
B.O. Kolbesen, K.R. Mayer and G.E. Schuh, J. Physics E, 8, 197 (1975).
F. Secco D’Aragona, J. Electrochem. Soc. 119, 948 (1972).
H. Baumgart, F. Phillipp, G.A. Rozgonyi and U. Gösele, Appl. Phys. Lett., 38, (1981).
G.A. Rozgonyi, H.J. Leamy, T.T. Sheng and G.K. Celler, Laser-Solid Interactions and Laser Processing, S.D. Ferris, H.J. Leamy and J.M. Poate (Eds.) AIP Proc. 50, 47 (1979).
H. Föil and M. Wilkens, Phys. Stat. Solidus 31a, 519 (1975).
K. Ishida, H.O. Kobayashi and M. Yoshida, Appl. Phys. Lett. 37, 175 (1980).
G.A. Rozgonyi and D.C. Miller, in Crystal Growth: A Tutorial Approach, W. Bardsley, D.T.J. Hurle and J.B. Mullin (Eds.)
H. Baumgart, O. Hildebrand and G.A. Rozgonyi, to be published.
M. Mizuta, N.H. Sheng, J.L. Merz, A. Lietoila, R.B. Gold and J.F. Gibbons, Appl. Phys. Lett. 37, 154 (1980).
G.K. Celler, J.M. Poate, G.A. Rozgonyi and T.T. Sheng, J. Appl. Phys. 50, 7264 (1979).
B.C. Larson, C.W. White and B.R. Appleton, Appl. Phys. Lett. 32, 801 (1978).
H.J. Leamy, S.D. Ferris, G.L. Miller, W.L. Brown and G.K. Celler pg. 556 in ref. 6.
C.W. Pearce and V.J. Zaleckas, J. Electrochem. Soc. 126, 1436 (1979).
R. Uebbing, P. Wagner, H. Baumgart and H.J. Queisser, Appl. Phys. Lett. 37, (1980).
on leave from Bell Laboratories, Murray Hill, NJ 07974
About this article
Cite this article
Rozgonyi, G.A., Baumgart, H. & Phillipp, F. Dislocation Nucleation, Growth and Suppression During CW Laser Annealing of Silicon. MRS Online Proceedings Library 1, 193 (1980). https://doi.org/10.1557/PROC-1-193