GaAsSb (N) superattices (SLs) grown on InP substrates using metalorganic vapor phase epitaxy are investigated by high-resolution x-ray diffraction (XRD), low-temperature photoluminescence (PL), and high-resolution transmission electron microscopy (TEM). XRD shows very sharp satellite peaks and pendellosung fringes, which indicates excellent crystalline quality and abrupt interfaces in the GaAsSb (N)/InP SL, with Sb varies with 0.2 to 0.7. Low temperature PL shows clearly different features between the 25% Sb and 44% Sb samples. A band alignment difference is proposed to explain these behaviors. Experimental data establishes that the transition from a type-I to a type-II heterostructure occurs for a Sb-content of approximately 40%, which agrees well with the prediction by Model Solid Theory. While N incorporation degrades the PL intensity, it also provides the greater electron confinement needed to achieve mid-IR emission from GaAsSbN/GaAsSb type-II QWs
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Xu, D., Huang, J.YT., Park, J.H. et al. Characteristics of Strained GaAsSb(N)/InP Quantum Wells Grown by Metalorganic Chemical Vapor Deposition on InP Substrates. MRS Online Proceedings Library 994, 09941101 (2006). https://doi.org/10.1557/PROC-0994-F11-01