Skip to main content
SpringerLink
Log in

Characteristics of Strained GaAsSb(N)/InP Quantum Wells Grown by Metalorganic Chemical Vapor Deposition on InP Substrates

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

GaAsSb (N) superattices (SLs) grown on InP substrates using metalorganic vapor phase epitaxy are investigated by high-resolution x-ray diffraction (XRD), low-temperature photoluminescence (PL), and high-resolution transmission electron microscopy (TEM). XRD shows very sharp satellite peaks and pendellosung fringes, which indicates excellent crystalline quality and abrupt interfaces in the GaAsSb (N)/InP SL, with Sb varies with 0.2 to 0.7. Low temperature PL shows clearly different features between the 25% Sb and 44% Sb samples. A band alignment difference is proposed to explain these behaviors. Experimental data establishes that the transition from a type-I to a type-II heterostructure occurs for a Sb-content of approximately 40%, which agrees well with the prediction by Model Solid Theory. While N incorporation degrades the PL intensity, it also provides the greater electron confinement needed to achieve mid-IR emission from GaAsSbN/GaAsSb type-II QWs

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. C.R. Bolognesi, N. Matine, M.W. Dvorak, X.G. Xu, J. Hu, S.P. Watkins, IEEE Electron Device Lett. 20, 155(1999).

  2. M.W. Dvorak, C.R. Bolognesi, O.J. Pitts, S.P. Watkins, IEEE Electron Device Lett. 22, 361(2001) .

  3. M. Peter, R. Kiefer, F. Fuchs, N. Herres, K. Winkler, K.-H. Bachem, and J. Wagner, Appl. Phys. Lett.74, 1951(1999).

  4. J.Y.T. Huang, D.P. Xu, J.H. Park, L. J. Mawst, T. F. Kuech, I. Vurgaftman, and J. R. Meyer in Proc. IEEE LEOS’2006, Montreal Canada, pp. 182–183, Nov. 2006.

  5. M. Peter, N. Herres, F. Fuchs, K. Winkler, K.H. Bachem, J. Wagner, Appl. Phys. Lett. 74, 410(1999).

  6. J. Hu, X.G. Xu, J.A.H. Stotz, S.P. Watkins, A.E. Curzon, M.L.W. Thewalt, N. Matine, C.R. Bolognesi, Appl. Phys. Lett. 73, 2799(1998).

  7. S.S. Yi, D.R. Chamberlin, G. Girolami, M. Juanitas, D. Bour, N. Moll, R. Moon, Journal of Crystal Growth 248, 284 (2003)

  8. M. P. C. M. Krijn, Semicond. Sci. Technol. 6, 27(1991).

  9. C. G. Van de Walle, Phys. Rev. B 39, 1871 (1988).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Electrical and Computer Engineering, University of Wisconsin-Madison, 53706, Madison, WI, USA

    Dapeng Xu, Juno Yu-Ting Huang, Joo Hyung Park & Luke J. Mawst

  2. Chemical and Biological Engineering, University of Wisconsin-Madison, 53706, Madison, WI, USA

    Thomas F. Kuech

  3. Materials Science and Engineering, University of Wisconsin-Madison, 53706, Madison, WI, USA

    Xueyan Song & Susan E. Babcock

Authors
  1. Dapeng Xu
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Juno Yu-Ting Huang
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Joo Hyung Park
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Luke J. Mawst
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Thomas F. Kuech
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Xueyan Song
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Susan E. Babcock
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Xu, D., Huang, J.YT., Park, J.H. et al. Characteristics of Strained GaAsSb(N)/InP Quantum Wells Grown by Metalorganic Chemical Vapor Deposition on InP Substrates. MRS Online Proceedings Library 994, 09941101 (2006). https://doi.org/10.1557/PROC-0994-F11-01

Download citation

  • Received:

  • Accepted:

  • Published:

  • DOI: https://doi.org/10.1557/PROC-0994-F11-01

Search

Navigation