Characterization of the Segregation of Arsenic at the Interface SiO2/Si

MRS Online Proceedings Library volume 994, Article number: 09940802 (2006) Cite this article

Abstract

The segregation of As atoms at the Si/SiO2 interface during annealing was investigated by grazing incidence X-ray fluorescence spectroscopy in combination with successive removal of silicon layers by etching with thicknesses on the order of a nanometer. With this method it is possible to clearly distinguish between the segregated atoms and the As atoms in the bulk over a large range of implantation doses from 3•1012 cm−2 to 1•1016 cm−2. The samples were annealed at 900 °C and 1000 °C, respectively, for times sufficiently long to ensure that the segregation reflects an equilibrium effect. The results were confirmed by medium energy ion scattering, Z-contrast measurements and electron energy loss spectroscopy.

This is a preview of subscription content, access via your institution.

Access options

Buy single article

Instant access to the full article PDF.

US$ 39.95

Tax calculation will be finalised during checkout.

References

  1. 1.

    G. A. Sai-Halasz K. T. Short, and J. S. Williams, IEEE Electron Device Lett. 6, 285 (1985).

    Article  Google Scholar 

  2. 2.

    K. Shibahara, H. Furumoto, K. Egusa, M. Koh ,and S. Yokoyama, Mat. Res. Soc. Symp. Proc. 532, 23 (1998).

    CAS  Article  Google Scholar 

  3. 3.

    Y. Sato, J. Nakata, K. Imai, and E. Arai, J. Electrochem. Soc. 142, 655 (1995).

    CAS  Article  Google Scholar 

  4. 4.

    R. Kasnavi, Y. Sun, R. Mo, P. Pianetta, P. B. Griffin, and J. D. Plummer, J. Appl. Phys. 87, 2255 (2000).

    CAS  Article  Google Scholar 

  5. 5.

    M. Ferri, S. Solmi, A. Parisini, M. Bersani, D. Giubertoni, and M. Barozzi, J. Appl. Phys. 99, 113508 (2006).

    Article  Google Scholar 

  6. 6.

    J. A. Van den Berg, D. G. Armour, S. Zhang, S. Whelan, H. Ohno, T.-S. Wang, A. G. Cullis, E. H. J. Collart, R. D. Goldberg, P. Bailey, and T. C. Q. Noakes, J. Vac. Sci. Technol. B 20, 974 (2002).

  7. 7.

    W.K. Chu, J.W. Mayer, M. Nicolet, Backscattering Spectrometry, Academic, New York, 1978.

  8. 8.

    J. A. Bardwell, N. Draper, and P. Schmuki, J. Appl. Phys. 79(11), 8761 (1996).

  9. 9.

    H. Ryssel, K. Schmid, and H. Müller, J Physics E 6, 492 (1973).

    CAS  Article  Google Scholar 

  10. 10.

    W. Windl, T. Liang, S. Lopatin, and G. Duscher, Mater. Sci. Eng. B 114–115, 156 (2004).

    Article  Google Scholar 

  11. 11.

    J. Dabrowski, H.-J. Müssig, V. Zavodinsky, R. Baierle, and M. J. Caldas, Physical Review B 65, 245305 (2002).

    Article  Google Scholar 

Download references

Author information

Affiliations

  1. University of Erlangen-Nuremberg, 91058, Erlangen, Germany

    Christian Steen, Peter Pichler & Heiner Ryssel

  2. Fraunhofer Institute of Integrated Systems and Device Technology, 91058, Erlangen, Germany

    Peter Pichler & Heiner Ryssel

  3. North Carolina State University, 27695-7907, Raleigh, NC, USA

    Lirong Pei & Gerd Duscher

  4. Oak Ridge National Laboratory, 37831, Oak Ridge, TN, USA

    Gerd Duscher

  5. University of Salford, M5 4WT, Salford, United Kingdom

    Matt Werner & Jaap A. van den Berg

  6. Ohio State University, 43210-1178, Columbus, OH, USA

    Wolfgang Windl

Authors
  1. Christian Steen
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Peter Pichler
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Heiner Ryssel
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Lirong Pei
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Gerd Duscher
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Matt Werner
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Jaap A. van den Berg
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. Wolfgang Windl
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Christian Steen.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Steen, C., Pichler, P., Ryssel, H. et al. Characterization of the Segregation of Arsenic at the Interface SiO2/Si. MRS Online Proceedings Library 994, 09940802 (2006). https://doi.org/10.1557/PROC-0994-F08-02

Download citation