Characterization of the Segregation of Arsenic at the Interface SiO2/Si


The segregation of As atoms at the Si/SiO2 interface during annealing was investigated by grazing incidence X-ray fluorescence spectroscopy in combination with successive removal of silicon layers by etching with thicknesses on the order of a nanometer. With this method it is possible to clearly distinguish between the segregated atoms and the As atoms in the bulk over a large range of implantation doses from 3•1012 cm−2 to 1•1016 cm−2. The samples were annealed at 900 °C and 1000 °C, respectively, for times sufficiently long to ensure that the segregation reflects an equilibrium effect. The results were confirmed by medium energy ion scattering, Z-contrast measurements and electron energy loss spectroscopy.

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  1. 1.

    G. A. Sai-Halasz K. T. Short, and J. S. Williams, IEEE Electron Device Lett. 6, 285 (1985).

    Article  Google Scholar 

  2. 2.

    K. Shibahara, H. Furumoto, K. Egusa, M. Koh ,and S. Yokoyama, Mat. Res. Soc. Symp. Proc. 532, 23 (1998).

    CAS  Article  Google Scholar 

  3. 3.

    Y. Sato, J. Nakata, K. Imai, and E. Arai, J. Electrochem. Soc. 142, 655 (1995).

    CAS  Article  Google Scholar 

  4. 4.

    R. Kasnavi, Y. Sun, R. Mo, P. Pianetta, P. B. Griffin, and J. D. Plummer, J. Appl. Phys. 87, 2255 (2000).

    CAS  Article  Google Scholar 

  5. 5.

    M. Ferri, S. Solmi, A. Parisini, M. Bersani, D. Giubertoni, and M. Barozzi, J. Appl. Phys. 99, 113508 (2006).

    Article  Google Scholar 

  6. 6.

    J. A. Van den Berg, D. G. Armour, S. Zhang, S. Whelan, H. Ohno, T.-S. Wang, A. G. Cullis, E. H. J. Collart, R. D. Goldberg, P. Bailey, and T. C. Q. Noakes, J. Vac. Sci. Technol. B 20, 974 (2002).

  7. 7.

    W.K. Chu, J.W. Mayer, M. Nicolet, Backscattering Spectrometry, Academic, New York, 1978.

  8. 8.

    J. A. Bardwell, N. Draper, and P. Schmuki, J. Appl. Phys. 79(11), 8761 (1996).

  9. 9.

    H. Ryssel, K. Schmid, and H. Müller, J Physics E 6, 492 (1973).

    CAS  Article  Google Scholar 

  10. 10.

    W. Windl, T. Liang, S. Lopatin, and G. Duscher, Mater. Sci. Eng. B 114–115, 156 (2004).

    Article  Google Scholar 

  11. 11.

    J. Dabrowski, H.-J. Müssig, V. Zavodinsky, R. Baierle, and M. J. Caldas, Physical Review B 65, 245305 (2002).

    Article  Google Scholar 

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Correspondence to Christian Steen.

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Steen, C., Pichler, P., Ryssel, H. et al. Characterization of the Segregation of Arsenic at the Interface SiO2/Si. MRS Online Proceedings Library 994, 09940802 (2006).

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