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Cathodoluminescence Study of V-defects in AlGaAs-based High-power Laser Bars

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Abstract

High-power semiconductor lasers are required to be more and more powerful, efficient and reliable for applications such as solid-state lasers pumping, materials processing, and thermal printing among others. The understanding of the degradation mechanisms is essential to improve the high power laser reliability. The highest power emission is achieved with multi-emitter laser cm-bars, which present problems related to packaging induced stress. A very harmful defect in this type of devices is the so-called V defect. We present herein a study of these defects using cathodoluminescence imaging, the role of packaging is discussed.

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Authors and Affiliations

  1. Fisica de la Materia Condensada, Universidad de Valladolid, ETSII, Paseo del Cauce s/n, 47011, Valladolid, Spain

    Matthieu Pommies, Manuel Avella, Alonso Martin & Juan Jimenez

  2. Alcatel Thales, 3-5 lab, RD 128, 91767, Palaiseau, France

    Myriam Oudart

  3. Thales Research and Technology, RD 128, 91767, Palaiseau, France

    Julien Nagle

Authors
  1. Matthieu Pommies
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  2. Manuel Avella
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  3. Alonso Martin
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  4. Juan Jimenez
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  5. Myriam Oudart
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  6. Julien Nagle
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Pommies, M., Avella, M., Martin, A. et al. Cathodoluminescence Study of V-defects in AlGaAs-based High-power Laser Bars. MRS Online Proceedings Library 994, 09940703 (2006). https://doi.org/10.1557/PROC-0994-F07-03

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  • DOI: https://doi.org/10.1557/PROC-0994-F07-03

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