Cathodoluminescence Study of V-defects in AlGaAs-based High-power Laser Bars

Abstract

High-power semiconductor lasers are required to be more and more powerful, efficient and reliable for applications such as solid-state lasers pumping, materials processing, and thermal printing among others. The understanding of the degradation mechanisms is essential to improve the high power laser reliability. The highest power emission is achieved with multi-emitter laser cm-bars, which present problems related to packaging induced stress. A very harmful defect in this type of devices is the so-called V defect. We present herein a study of these defects using cathodoluminescence imaging, the role of packaging is discussed.

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Correspondence to Matthieu Pommies.

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Pommies, M., Avella, M., Martin, A. et al. Cathodoluminescence Study of V-defects in AlGaAs-based High-power Laser Bars. MRS Online Proceedings Library 994, 09940703 (2006). https://doi.org/10.1557/PROC-0994-F07-03

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