Thermally Induced Relaxation in GaInNAsSb Quantum Well Structures

Abstract

GaInNAsSb quantum wells with GaNAs barriers, grown via molecular beam epitaxy (MBE) on 100-oriented GaAs substrates at varying temperatures, were analyzed using photoluminescence (PL), high-resolution x-ray diffraction (XRD), transmission electron microscopy (TEM), and energy-dispersive spectrometry (EDS). Samples grown at 420 °C, 440 °C, and 470 °C were analyzed, as were two pieces of the 440 °C growth temperature sample that had been annealed at 740 °C and 820 °C. These measurements showed that the decrease in PL with higher growth temperatures was due to the onset of 3D growth and the nucleation of dislocations. The degradation associated with overannealing was likely due to dislocation nucleation. The poor PL associated with low growth temperatures was due to another mechanism, most likely arsenic anti-site defects. EDS measurements showed greater composition uniformity with lower growth temperatures, as expected, and also showed that there was no ordered indium-rich or indium-poor phase separation at any temperature. Phase separation upon annealing was not observed.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    M. Weyers, M. Sato, and H. Ando, Jpn. J. Appl. Phys. 31, 853 (1992).

    Article  Google Scholar 

  2. 2.

    J.F. Geisz, D.J. Friedman, J.M. Olson, S.R. Kurtz, and B.M. Keyes, J. Cryst. Growth 195, 401 (1998).

    CAS  Article  Google Scholar 

  3. 3.

    K. Volz, V. Gambin, W. Ha, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, J. Cryst. Growth 251, 360 (2003).

    CAS  Article  Google Scholar 

  4. 4.

    H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, Jr., Appl. Phys. Lett. 88, 221913 (2006).

    Article  Google Scholar 

  5. 5.

    S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, and J. S. Harris, Electron. Lett. 42, 156 (2006)

    Article  Google Scholar 

  6. 6.

    M. A. Wistey, S. R. Bank, H. P. Bae, H. B. Yuen, E. R. Pickett, L. L. Goddard, and J. S. Harris, Electron. Lett. 42, 282 (2006).

    CAS  Article  Google Scholar 

  7. 7.

    S. R. Bank, H. B. Yuen, M. A. Wistey, V. Lordi, H. P. Bae, and J. S. Harris, Appl. Phys. Lett. 87, 021908 (2005).

    Article  Google Scholar 

  8. 8.

    H. P. Bae, S.R. Bank, H. B. Yuen, T. Sarmiento, E. R. Pickett, M. A. Wistey, and J. S. Harris, Appl. Phys. Lett., submitted.

  9. 9.

    K. Volz, T. Torunski, B. Junert, O. Rubel, S. Nau, S. Reinhard, W. Stolz, J. Cryst. Growth, 272, 739 (2004).

    CAS  Article  Google Scholar 

  10. 10.

    E. C. Young, A. N. Koveshnikov, S. Tixier, K. L. Kavanagh, and T. Tiedje, phys. stat. sol (a), 202, 2849 (2005).

    CAS  Article  Google Scholar 

  11. 11.

    X. Kong, A. Trampert, E. Tournié, and K. H. Ploog, Appl. Phys. Lett. 87, 171901 (2005).

    Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to Evan Pickett.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Pickett, E., Bank, S., Yuen, H. et al. Thermally Induced Relaxation in GaInNAsSb Quantum Well Structures. MRS Online Proceedings Library 994, 09940502 (2006). https://doi.org/10.1557/PROC-0994-F05-02

Download citation