Piezoelectric micromachined ultrasonic transducers comprising a 10 μm thick Si device layer and a 1-4 μm thick piezoelectric PZT layer were investigated. The PZT films were deposited by a sol-gel technique. The transverse piezoelectric coefficient was measured as -14.9 C/m2. The electromechanical coupling increased with PZT thickness, as expected. The influence of both the shape and area of the top electrode on the device performance has been investigated. The electromechanical coupling coefficient (k) and quality factor (Q) have been measured in air and were fitted to an equivalent circuit model. The maximal k2 was obtained as 7.8%.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
P. Muralt, IEEE Trans. on UFFC, (47) 903–915, 2000.
S. Yuan et al, Sens. and Act. A 108, 182–186, 2003.
P. Muralt, J. Micromech. Microeng. (10) 136–146, 2000.
B. Belgacem et al, 2006 IEEE Inter. Ultra. Symp. in Vancouver, in press
T. Maeder et al, British Ceramic Proc. 54, pp. 207–218, 1995.
S. Hiboux et al, Mater. Res. Soc. Symp. Proc., 595, pp.499–504, 2000.
M.-A. Dubois et al, Sensors and Actuators, A 77, 106–112, 1999.
About this article
Cite this article
Belgacem, B., Calame, F. & Muralt, P. Integration of PZT on SOI Wafers: Increasing Piezoelectric Film Thickness for Providing a Wide Range of Ultrasonic MEMS Applications. MRS Online Proceedings Library 969, 509 (2006). https://doi.org/10.1557/PROC-0969-W05-09