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Integration of PZT on SOI Wafers: Increasing Piezoelectric Film Thickness for Providing a Wide Range of Ultrasonic MEMS Applications

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Abstract

Piezoelectric micromachined ultrasonic transducers comprising a 10 μm thick Si device layer and a 1-4 μm thick piezoelectric PZT layer were investigated. The PZT films were deposited by a sol-gel technique. The transverse piezoelectric coefficient was measured as -14.9 C/m2. The electromechanical coupling increased with PZT thickness, as expected. The influence of both the shape and area of the top electrode on the device performance has been investigated. The electromechanical coupling coefficient (k) and quality factor (Q) have been measured in air and were fitted to an equivalent circuit model. The maximal k2 was obtained as 7.8%.

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Authors and Affiliations

  1. Ceramics Laboratory, Swiss Federal Institute of Technology in Lausanne, STI-IMX-LC, Station 12, Lausanne, 1015, Switzerland

    Brahim Belgacem, Florian Calame & Paul Muralt

Authors
  1. Brahim Belgacem
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  2. Florian Calame
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  3. Paul Muralt
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Belgacem, B., Calame, F. & Muralt, P. Integration of PZT on SOI Wafers: Increasing Piezoelectric Film Thickness for Providing a Wide Range of Ultrasonic MEMS Applications. MRS Online Proceedings Library 969, 509 (2006). https://doi.org/10.1557/PROC-0969-W05-09

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  • DOI: https://doi.org/10.1557/PROC-0969-W05-09

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