Fabrication of SiN-assisted 0.12um AlGaAs/InGaAs PHEMT and 60GHz-band MMICs for 60GHz WPAN system

Abstract

In this paper, the fabrication technology of SiN-assisted 0.12um double deck T-gate AlGaAs/InGaAs p-HEMT and 60GHz-bands MMICs for the high rate personal area network (WPAN) system was described. The effect of the gate shape such as the 1st-deck and the 2nd-deck gate head size on the DC and RF characteristics of the p-HEMT device and the device performance at the optimum gate head size were also presented. At 0.22um of the optimum 1st-deck gate head size and 1um of the 2nd-deck head size, the p-HEMT device with two finger gates of 0.12um length × 50um width shows an extrinsic transconductance of 529mS/mm and a threshold voltage of -1.19V. The cut-off frequency and the maximum frequency of oscillation were 94.7GHz and 189.1GHz, respectively. The gate shape of the p-HEMT device such as a gate head size is correlated to parasitic capacitances including Cgs which have effects on RF performances including a cut-off frequency (fT) and a maximum frequency of oscillation (fmax).

This is a preview of subscription content, access via your institution.

References

  1. 1.

    K. Ohata, K. Maruhashi, M. Ito, S. Kishimoto, K. Ikuina, T. Hashiguchi, K. Ikeda and N. Takahashi, IEEE MTT-S Dig. (2003) 373.

  2. 2.

    H. Tanaka, E. Suematsu, S. Handa, Y. Motouchi, N. Takahashi, A. Yamada, N. Matsumoto and H. Sato, IEEE GaAs Dig. (2001) 79.

  3. 3.

    S. Handa, E. Suematsu, H. Tanaka, Y. Motouchi, M. Yagura, A. Yamada and H. Sato, IEEE GaAs Dig. (2003) 227.

  4. 4.

    H. Brech, T. Grave, T. Simlinger and S. Selberger, IEEE GaAs IC sym. (1997) 66.

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to Hokyun Ahn.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Ahn, H., Lim, JW., Ji, HG. et al. Fabrication of SiN-assisted 0.12um AlGaAs/InGaAs PHEMT and 60GHz-band MMICs for 60GHz WPAN system. MRS Online Proceedings Library 969, 310 (2006). https://doi.org/10.1557/PROC-0969-W03-10

Download citation