Vertically Aligned Carbon Nanotubes Growth Using Self-assembled Ni Nanoparticles Produced by Ion Implantation

Abstract

An alternative method for seeding catalyst nanoparticles for carbon nanotubes and nanowires growth is presented. Ni nanoparticles are formed inside a 450 nm SiO2 film on (100) Si wafers through the implantation of Ni ions at fluences of 7.5×1015 and 1.7×1016 ions cm−2 and post-annealing treatment at 700, 900 and 1100 °C. After exposed to the surface by HF dip etching, the Ni nanoparticles are used as catalyst for the growth of vertically aligned carbon nanotubes by direct current plasma enhanced chemical vapor deposition.

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Correspondence to D. L. Baptista.

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Baptista, D.L., Lopes, J.M.J., Morschbacher, M.J. et al. Vertically Aligned Carbon Nanotubes Growth Using Self-assembled Ni Nanoparticles Produced by Ion Implantation. MRS Online Proceedings Library 960, 801 (2006). https://doi.org/10.1557/PROC-0960-N08-01

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