Optical Properties of Heavily Doped n-type CdSe Quantum Dots for Intersubband Device Applications


In this research, interband and intersubband optical properties of heavily doped n-type CdSe quantum dots were investigated by temperature dependent photoluminescence (PL) spectroscopy, picosecond time-resolved PL spectroscopy and Fourier transform infrared (FTIR) spectroscopy. Two doped and one undoped CdSe quantum dot samples with multiple QD layers were grown over ZnCdMgSe barrier layers on InP (001) substrate by molecular beam epitaxy. Heavy doping leads to decreasing of activation energy of nonradiative recombination centers, however, does not affect the luminescence efficiency of doped quantum wells. Time resolved PL experiments show that the PL decay times of the doped samples have weak dependence on well width and are much longer than that of the undoped sample. The two doped CdSe QD samples show strong Intersubband IR absorption that peaked at 2.54 μm, 2.69 μm and 3.51 μm. The ISB absorption is found to be strongly polarization dependent due to the large size of the QDs.

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Correspondence to Shengkun Zhang.

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Zhang, S., Zhou, X., Shen, A. et al. Optical Properties of Heavily Doped n-type CdSe Quantum Dots for Intersubband Device Applications. MRS Online Proceedings Library 959, 605 (2006). https://doi.org/10.1557/PROC-0959-M06-05

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