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Silicon Nanocrystals Fabricated by a Novel Plasma Enhanced Hydrogenation Technique Suitable for Light Emitting Devices

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Abstract

The preparation of nano-crystalline silicon suitable for optoelectronic purposes by plasma-enhanced hydrogenation is reported. The method is compatible with mature ULSI technology because of its low temperature and non-wet processing environment. Visible light emission with peak wavelengths ranging from blue to red has been observed and could be tuned by varying the processing conditions. While the blue light emission may be due to surface defects present in the oxide layer, the green and red light emissions are believed to be due excitonic emission within the nano-crystalline grains as a result of quantum confinement effects. The layers were studied by SEM, TEM, CL and FTIR. A LED was fabricated and electroluminescence demonstrated.

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Authors and Affiliations

  1. School of ECE, Faculty of Engineering, University of Tehran, Thin Film and Nanoelectronic Lab., North kargar Ave., Campus No. 2, Tehran, 14395-515, Iran

    Mehdi Jamei, Farshid Karbassian, Shams Mohajerzadeh, Yaser Abdi & Pouya Hashemi

  2. Physics, Acadia University, Wolfville, NS, B4P 2R6, Canada

    Michael Robertson & Sandra Yuill

Authors
  1. Mehdi Jamei
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  2. Farshid Karbassian
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  3. Shams Mohajerzadeh
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  4. Yaser Abdi
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  5. Pouya Hashemi
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  6. Michael Robertson
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  7. Sandra Yuill
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Jamei, M., Karbassian, F., Mohajerzadeh, S. et al. Silicon Nanocrystals Fabricated by a Novel Plasma Enhanced Hydrogenation Technique Suitable for Light Emitting Devices. MRS Online Proceedings Library 958, 705 (2006). https://doi.org/10.1557/PROC-0958-L07-05

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  • DOI: https://doi.org/10.1557/PROC-0958-L07-05

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