Nanoscale Transistors: Physics and Materials

Abstract

We analyze a modern-day 65nm MOSFET technology to determine its electrical characteristics and intrinsic ballistic efficiency. Using that information, we then predict the performance of similar devices comprised of different materials, such as high-k gate dielectrics and III-V channel materials. The effects of series resistance are considered. Comparisons are made between the performance of these hypothetical devices and future generations of devices from the ITRS roadmap, including double-gate MOSFETs. We conclude that a Si channel device with a high-k gate dielectric and metal gate will outperform III-V channel materials for conventional CMOS applications, but will still not suffice in achieving long-term ITRS goals.

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References

  1. 1.

    ITRS report on Process Integration, Devices and Modeling, 2005 edition, at http://www.itrs.net

  2. 2.

    A. Khakifirooz and D. A. Antoniadis, to be published in IEDM Tech. Dig. (2006)

  3. 3.

    M. S. Lundstrom and J. Guo, Nanoscale Transistors: Device Physics, Modeling, and Simulation, 1st Ed. (Springer, New York, 2005) pp. 83–113

    Google Scholar 

  4. 4.

    J.S. Blakemore, Semiconductor Statistics, Dover, 1987

  5. 5.

    S. Tyagi, C. Auth, P. Bai, G. Curello, H. Deshpande, S. Gannavaram, O. Golonzka, R. Heussner, R. James, C. Kenyon, S–H. Lee, N. Lindert, M. Liu, R. Nagisetty, S. Natarajan, C. Parker, J. Sebastian, B. Sell, S. Sivakumar, A. St Amour, K. Tone, IEDM Tech. Dig. (2005), pp. 1070–1072

  6. 6.

    Simulations were performed using Schred on http://www.nanohub.org

  7. 7.

    K. Uchida, T. Krishnamohan, K. C. Saraswat, and Y. Nishi, IEDM Tech. Dig. (2005), pp. 129–132

  8. 8.

    R. Chau, S. Datta, A. Majumdar, Compound Semiconductor Integrated Circuit Symp. (2005), pp. 4–7

  9. 9.

    K. K. Ng, C. S. Rafferty, H. Cong, IEDM Tech. Dig. (2001), pp. 31.5.1–31.5.4

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Correspondence to Mark S. Lundstrom.

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Lundstrom, M.S., Cantley, K.D. & Pal, H.S. Nanoscale Transistors: Physics and Materials. MRS Online Proceedings Library 958, 606 (2006). https://doi.org/10.1557/PROC-0958-L06-06

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