Defect Evolution During Laser Annealing

Abstract

Implementation of millisecond annealing requires the identification of the operating conditions for that technique which minimize the residual defects. In addition, possible combinations of low temperature annealing with millisecond annealing could result in minimal residual defects. The samples studied here were implanted with Ge+ pre-amorphization and boron dopant ions and were activated with a scanning laser annealing technique with maximum temperature dwell times of about one millisecond. The laser anneal conditions were varied, along with combinations of spike anneals. The annealed samples were analyzed by plan-view transmission electron microscopy (TEM) to measure the residual defect density and size. The effects of spike temperature, laser annealing temperature, and scan rate will be discussed.

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References

  1. 1

    The International Technology Roadmap for Semiconductors, 2005.

  2. 2

    T. Noda, S. Felch, V. Parihar, C. Vrancken, T. Janssens, and W. Vandervorst, submitted to These Proceedings.

  3. 3

    D. Zeenberg and K. Jones, submitted to These Proceedings.

  4. 4

    W. Ostwald, Z. Phys. Chem., Stoechiom. Verwandtschaftsl. 34, 495 (1900).

    Google Scholar 

  5. 5

    B. Burton and M. V. Speight, Philos. Mag. A 53, 385 (1986).

    CAS  Article  Google Scholar 

  6. 6

    A. Jain, Mat. Res. Soc. Symp. Proc., Vol. 810, p. 229 (2004).

    CAS  Article  Google Scholar 

  7. 7

    S.B. Felch, H. Graoui and A. Mayur, Proc. of Intl. Symp. On Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II, Electrochemical Society, Vol. 2004-01, p. 31.

  8. 8

    A. Falepin, T. Janssens, S. Severi, W. Vandervorst, S.B. Felch, V. Parihar, and A. Mayur, Proc. of 2005 RTP Conference, IEEE.

  9. 9

    J. M. Jacques, presentation at Spring 2004 Materials Research Society symposium.

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Correspondence to Susan B. Felch.

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Felch, S.B., Mayur, A., Parihar, V. et al. Defect Evolution During Laser Annealing. MRS Online Proceedings Library 912, 403 (2005). https://doi.org/10.1557/PROC-0912-C04-03

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