As extensions have been up till now always used in N-MOS transistors with an activation anneal. Here, we show that also alternative doping by P can result in junction extensions that are extremely abrupt and shallow thus suitable for upcoming transistor technologies. P extensions are manufactured by amorphization, carbon co-implantation and conventional rapid thermal annealing (RTA). The impact of Si interstitials (Sii) flux suppression on the formation of P junction extensions during RTA is demonstrated. We have concluded that optimization of implants followed by RTA spike offers excellent extensions with depth Xj = 20 nm (taken at 5 × 1018 at./cm3), abruptness 3 nm/dec. and Rs = 326 Ω. Successful implementation of these junctions is straightforward for N-MOS devices with 30 nm gate length and results in an improved short channel effects with respect to the As reference.
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S. Ruffell, I. V. Mitchell, and P. J. Simpson, J. Appl. Phys. 97, 123518 (2005).
E. J. H. Collart, S. B. Felch, B. J. Pawlak, P. P. Absil, S. Severi, T. Janssens, and W. Vandervorst, J. Vac. Sci. Technol. B 24, 507 (2006).
B. J. Pawlak, R. Duffy, T. Janssens, W. Vandervorst, S. Felch, E. Collart, N. E. B. Cowern, submitted to Appl. Phys. Lett.
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Pawlak, B.J., Duffy, R., Augendre, E. et al. The Carbon Co-implant with Spike RTA Solution for Phosphorus Extension. MRS Online Proceedings Library 912, 106 (2005). https://doi.org/10.1557/PROC-0912-C01-06