The Carbon Co-implant with Spike RTA Solution for Phosphorus Extension

Abstract

As extensions have been up till now always used in N-MOS transistors with an activation anneal. Here, we show that also alternative doping by P can result in junction extensions that are extremely abrupt and shallow thus suitable for upcoming transistor technologies. P extensions are manufactured by amorphization, carbon co-implantation and conventional rapid thermal annealing (RTA). The impact of Si interstitials (Sii) flux suppression on the formation of P junction extensions during RTA is demonstrated. We have concluded that optimization of implants followed by RTA spike offers excellent extensions with depth Xj = 20 nm (taken at 5 × 1018 at./cm3), abruptness 3 nm/dec. and Rs = 326 Ω. Successful implementation of these junctions is straightforward for N-MOS devices with 30 nm gate length and results in an improved short channel effects with respect to the As reference.

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Correspondence to Bartek J. Pawlak.

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Pawlak, B.J., Duffy, R., Augendre, E. et al. The Carbon Co-implant with Spike RTA Solution for Phosphorus Extension. MRS Online Proceedings Library 912, 106 (2005). https://doi.org/10.1557/PROC-0912-C01-06

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