Germanium & Carbon Co-implantation for Enhanced Short Channel Effect Control in PMOS Devices

MRS Online Proceedings Library volume 912, Article number: 105 (2005) Cite this article

Abstract

This work demonstrates the efficiency of a Germanium and Carbon co-implantation that suppresses the Boron Transient Enhanced Diffusion, enhances Boron activation and enables large improvement of Short Channel Effects in PMOS devices while maintaining drive current performances. We present here 65/45nm node devices on conventional bulk substrates featuring Germanium and Carbon engineered shallow junctions that enable to reduce the Drain Induced Barrier Lowering compared to devices implanted only with Boron. This improvement is attributed to the suppression of Boron channelling with Ge pre-amorphization (PAI), and to the reduction of Boron TED due to the trapping of interstitial defects by Carbon with Germanium PAI.

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Affiliations

  1. STMicroelectronics, 850 rue Jean-Monnet, Crolles, 38920, France

    Benjamin Dumont, Benjamin Oudet & Thomas Skotnicki

  2. LPM - INSA de Lyon, Bât. Blaise Pascal, 7, avenue Jean Capelle, Villeurbanne, 69621, France

    Benjamin Dumont & Kader Souifi

  3. Philips Semiconductors, 850 rue Jean-Monnet, Crolles, 38926, France

    Arnaud Pouydebasque & Dominique Delille

  4. Philips Research, Kapeldreef 75, Leuven, B-3001, Belgium

    Bartek Pawlak

  5. Ion Beam Services, ZI Peynier-Rousset, rue Gaston Imbert prolongée, Peynier, 13790, France

    Frederic Milesi

  6. CEA-LETI, 17 rue des Martyrs, Grenoble, 38000, France

    Frederic Milesi

Authors
  1. Benjamin Dumont
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  2. Arnaud Pouydebasque
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  3. Bartek Pawlak
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  4. Benjamin Oudet
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  5. Dominique Delille
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  6. Frederic Milesi
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  7. Kader Souifi
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  8. Thomas Skotnicki
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Correspondence to Benjamin Dumont.

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Dumont, B., Pouydebasque, A., Pawlak, B. et al. Germanium & Carbon Co-implantation for Enhanced Short Channel Effect Control in PMOS Devices. MRS Online Proceedings Library 912, 105 (2005). https://doi.org/10.1557/PROC-0912-C01-05

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