Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes

Abstract

Practical design of high-voltage SiC Schottky rectifiers requires the understanding of the influence of the epitaxial dopant concentration on the reverse and forward characteristics. This work analyzes the correlation between the dopant concentration and the I-V characteristics of Schottky diodes for a critical concentration range where the leakage current variations are more evident. The details of how high temperatures affect the properties of junctions have been carefully described to obtain further improvement in the future by proper device optimization. Dopant concentration of about 1.2 × 1016 cm-3 gives the best results in reverse characteristics without great losses in forward currents.

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La Ia, F., Galvagno, G., Firrincieli, A. et al. Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes. MRS Online Proceedings Library 911, 1002 (2005). https://doi.org/10.1557/PROC-0911-B10-02

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