Multiplication of Basal Plane Dislocations via Interaction with c-Axis Threading Dislocations in 4H-SiC

MRS Online Proceedings Library volume 911, Article number: 904 (2005) Cite this article

Abstract

Silicon carbide (SiC) substrates with chemical vapor deposition (CVD) grown epilayers have been characterized by synchrotron white beam X-ray topography (SWBXT). Large numbers of circular basal plane dislocation loops (BPDs) were observed in the substrate which were anchored by threading screw dislocations (SDs). Threading edge dislocations (TEDs) are not observed to play an important role in the multiplication of BPDs. A SD-assisted “conservative climb” model is proposed to explain the multiplication of BPDs during growth and/or post-growth processes. BPDs are shown to multiply on adjacent parallel basal planes via single SD-assisted as well as opposite sign SD-pair-assisted “conservative climb”.

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Affiliations

  1. Department of Materials Science and Engineering, Stony Brook University, NY, 11794-2275, Stony Brook, USA

    Yi Chen, Govindhan Dhanaraj & Michael Dudley

  2. Department of Mechanical Engineering, Stony Brook University, NY, 11794-2300, Stony Brook, USA

    Hui Zhang

  3. Department of Mechanical Engineering, University of Maryland at Baltimore County, MD, 21250, Baltimore, USA

    Ronghui Ma

  4. Department of Electrical Engineering, University of South Florida, FL, 33620, Tampa, USA

    Yevgeniy Shishkin & Stephen E. Saddow

Authors
  1. Yi Chen
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  2. Govindhan Dhanaraj
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  3. Michael Dudley
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  4. Hui Zhang
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  5. Ronghui Ma
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  6. Yevgeniy Shishkin
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  7. Stephen E. Saddow
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Chen, Y., Dhanaraj, G., Dudley, M. et al. Multiplication of Basal Plane Dislocations via Interaction with c-Axis Threading Dislocations in 4H-SiC. MRS Online Proceedings Library 911, 904 (2005). https://doi.org/10.1557/PROC-0911-B09-04

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