Epitaxial Growth and Characterization of SiC on Different Orientations


Background doping as well as intentional doping using nitrogen and trimethylaluminum have been investigated for 4H-SiC epitaxy on offcut Si face, C face, and a-axis substrates over a wide range of C:Si ratio. Smooth morphology can be obtained at a C:Si ratio of 2.0 on a-axis substrates but not on Si or C face material. Background doping levels of <1 × 1015 cm-3 were achieved on a-axis and Si face material. Nitrogen incorporated much more efficiently on C face and a-axis as compared to Si face. Aluminum incorporated most efficiently on Si face and least efficiently on C face. Both of the above dopant incorporation trends were most pronounced at high C:Si ratios and were small or virtually absent at low C:Si ratios.

This is a preview of subscription content, access via your institution.


  1. 1

    C. W. Pearce, in VLSI Technology (ed. S. M. Sze, McGraw-Hill: New York, 1983), pp. 9–50.

    Google Scholar 

  2. 2

    R. Buczko, S. J. Pennycook, and S. T. Pantelides, Phys. Rev. Lett. 84, 943–946 (2000).

    CAS  Article  Google Scholar 

  3. 3

    C. Hallin, A. Ellison, I. G. Ivanov, A. Henry, N.T. Son, and E. Janzén, Mater. Sci. Forum 264-268, 123–126, (1998).

    Article  Google Scholar 

  4. 4

    K. Wada, T. Kimoto, K. Mishikawa, and H. Matsunami, Mater. Sci. Forum 483-485, 85–88 (2005).

    Article  Google Scholar 

  5. 5

    L.B. Rowland, A. A. Burk, Jr., and C. D. Brandt, presented at 39th Electronic Materials Conference, Boulder, CO, June 1997.

    Google Scholar 

  6. 6

    C. Blanc, C. Sartel, V. Soulière, S. Juillaguet, Y. Monteil, and J. Camassel, Mater. Sci. Forum 457-460, 237–240 (2004).

    Article  Google Scholar 

  7. 7

    U. Forsberg, Ö. Danielsson, A. Henry, M. K. Linnarsson and E. Janzén, J. Cryst. Growth 236, 101–112 (2001).

    Article  Google Scholar 

  8. 8

    K. Kojima, S. Kuroda, H. Okumura, K. Arai, Microelectron. Eng. 83, 79–81 (2006).

    CAS  Article  Google Scholar 

  9. 9

    C. Blanc, M. Zielinski, V. Soulière, C. Sartel, S. Juillaguet, S. Contreras, J. Camassel, and Y. Monteil, Mater. Sci. Forum 483-485, 117–120 (2005).

    Article  Google Scholar 

  10. 10

    A.O. Konstantinov , C. Hallin , B. Pécz , O. Kordina, and E. Janzén, J. Cryst. Growth 178, 495–504 (1997).

    CAS  Article  Google Scholar 

  11. 11

    T. Kimoto and H. Matsunami, J. Appl. Phys. 78, 3132–37 (1995).

    CAS  Article  Google Scholar 

  12. 12

    A. A. Burk, Jr. and L. B. Rowland, Phys. Stat. Sol. (b) 202, 263–79 (1997).

    CAS  Article  Google Scholar 

  13. 13

    T. Kimoto, H. Yano, Y. Negoro, K. Hashimoto, and H. Matsunami, in Silicon Carbide: Recent Major Advances (eds. W.J. Choyke, H. Matsunami, and G. Pensl, Springer-Verlag: Berlin, 2004), pp. 711–733.

    Google Scholar 

  14. 14

    T. Kimoto, A. Itoh, and H. Matsunami, Appl. Phys. Lett. 67, 2385–87 (1995).

    CAS  Article  Google Scholar 

  15. 15

    D. J. Larkin, P. G. Neudeck, J. A. Powell, and L. G. Matus, Appl. Phys. Lett. 65, 1659–61 (1994).

    CAS  Article  Google Scholar 

Download references

Author information



Rights and permissions

Reprints and Permissions

About this article

Cite this article

Rowland, L.B., Li, C., Dunne, G.T. et al. Epitaxial Growth and Characterization of SiC on Different Orientations. MRS Online Proceedings Library 911, 901 (2005). https://doi.org/10.1557/PROC-0911-B09-01

Download citation