Abstract
The surface of 3C-SiC(001) single-crystal epilayers grown on Si(001) substrates is well known to be inhomogeneous and defective. Therefore, the control and understanding at the atomic scale of 3C-SiC surfaces is a key issue. We study the effect of hydrogen etching at different temperatures on the morphology of 3C-SiC(001) surfaces by using Nomarksi optical microscopy, atomic force microscopy (AFM) and scanning electron microscopy (SEM). As-grown 3C-SiC(001) samples have been hydrogen etched in a horizontal hot-wall chemical vapor deposition (CVD) reactor at atmospheric pressure for different times and temperatures. Flat, high-quality surfaces presenting defined atomic terraces were observed within the 3C-SiC grain boundaries after etching at 1200°C for 30 minutes. Higher etching temperatures resulted in surfaces with step bunching and enlarged surface defects. Samples etched under the best conditions have been studied using low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES).
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References
M. Reyes, M. Waits, S.P. Rao, Y. Shishkin, B. Geil, J.T. Wolan and S.E. Saddow, “Growth of 3C-SiC on Si molds for MEMS applications,” ICSCRM 05, 18–23 Sep. 2005, Pittsburgh, PA (2005).
U. Starke: “Atomic structure of SiC surfaces”, in Silicon Carbide, Recent Major Advances (eds: W.J. Choyke, H. Matsunami, and G. Pensl, Springer, 2004), p. 281.
R. L. Myers, Y. Shishkin, O. Kordina, and S.E. Saddow, “High growth rates (>30µm/h) of 4H-SiC epitaxial layers using a horizontal hot-wall CVD reactor”, Journal of Crystal Growth vol. 285/4 (2005) pp. 483–486.
A.A. Burk Jr., L.B.Rowland, “The role of excess silicon and in situ ethincg on 4H-SiC and 6H-SiC epitaxial layer morphology”, Journal of Crystal Growth 167 (1197), pp. 586– 595
S. Soubatch, S.E. Saddow, S.P. Rao, W. Y. Lee, M. Konuma, and U. Starke, Mat. Sci. Forum Vols. 483-485 (2005), pp. 761–764.
U. Starke, W.Y. Lee, C. Coletti, S.E. Saddow, R.P. Devaty, and W.J. Choyke, “SiC Pore Surfaces: Surface Studies of 4H-SiC(-1102) and 4H-SiC(-110 -2),” Appl. Phys. Letters 88 (3) (2006) pp. 031915–1.
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Coletti, C., Hetzel, M., Virojanadara, C. et al. Surface morphology and structure of hydrogen etched 3C-SiC(001) on Si(001). MRS Online Proceedings Library 911, 802 (2005). https://doi.org/10.1557/PROC-0911-B08-02
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DOI: https://doi.org/10.1557/PROC-0911-B08-02